Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio2 gate oxide

C. K. Wang; Y. Z. Chiou; S. J. Chang; Y. K. Su; B. R. Huang; T. K. Lin; S. C. Chen

doi:10.1007/s11664-003-0167-2

Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio₂ gate oxide

C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B. R. Huang, T. K. Lin, S. C. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

High-quality SiO₂ was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D₂ lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated I_ds, maximum g_m, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

Original language	English
Pages (from-to)	407-410
Number of pages	4
Journal	Journal of Electronic Materials
Volume	32
Issue number	5
DOIs	https://doi.org/10.1007/s11664-003-0167-2
Publication status	Published - 2003 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-003-0167-2

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title = "Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio2 gate oxide",

abstract = "High-quality SiO2 was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.",

author = "Wang, {C. K.} and Chiou, {Y. Z.} and Chang, {S. J.} and Su, {Y. K.} and Huang, {B. R.} and Lin, {T. K.} and Chen, {S. C.}",

note = "Funding Information: This work was supported by National Science Council under Contract No. NSC-89-2215-E-006-095.",

year = "2003",

month = may,

doi = "10.1007/s11664-003-0167-2",

language = "English",

volume = "32",

pages = "407--410",

journal = "Journal of Electronic Materials",

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publisher = "Springer New York",

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TY - JOUR

T1 - Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio2 gate oxide

AU - Wang, C. K.

AU - Chiou, Y. Z.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Huang, B. R.

AU - Lin, T. K.

AU - Chen, S. C.

N1 - Funding Information: This work was supported by National Science Council under Contract No. NSC-89-2215-E-006-095.

PY - 2003/5

Y1 - 2003/5

N2 - High-quality SiO2 was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

AB - High-quality SiO2 was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

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SP - 407

EP - 410

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio₂ gate oxide

Abstract

All Science Journal Classification (ASJC) codes

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