Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio2 gate oxide

C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B. R. Huang, T. K. Lin, S. C. Chen

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

High-quality SiO2 was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

Original languageEnglish
Pages (from-to)407-410
Number of pages4
JournalJournal of Electronic Materials
Volume32
Issue number5
DOIs
Publication statusPublished - 2003 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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