Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio₂ gate oxide

Engineering & Materials Science

• Oxide semiconductors 100%
• Chemical vapor deposition 98%
• High electron mobility transistors 97%
• Oxides 72%
• Metals 54%
• Nitrides 25%
• Electric lamps 23%
• Leakage currents 22%
• Semiconductor materials 18%
• Electric potential 10%

Physics & Astronomy

• metal oxide semiconductors 86%
• field effect transistors 66%
• vapor deposition 64%
• oxides 52%
• metals 21%
• luminaires 19%
• nitrides 19%
• leakage 17%
• electric potential 11%
• excitation 10%

Chemical Compounds

• Field Effect 83%
• Metal Oxide 70%
• Semiconductor 64%
• Oxide 45%
• Metal 18%