AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on a liquid phase deposited oxide

AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (MOSHFETs) with liquid phase deposited SiO₂ as the insulating gate are demonstrated. A very large gate swing voltage is applied. An AlGaN/GaN MOS heterostructure FET with saturation characteristics is observed. For a gate length of 2 μm in a 5 μm channel opening with a gate width of 100 μm, MOSHFET with transconductance and maximum drain current of 78 mS/mm and 720 mA/mm, respectively, is achieved.