Abstract
Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the MOS structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing and a lower subthreshold swing (110 mV/decade) are obtained. The gate leakage current density is significantly improved, and the gate pulse measurement shows that the current collapse is more suppressed for MOSHEMTs.
Original language | English |
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Article number | 6069856 |
Pages (from-to) | 121-127 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 59 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering