AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor with liquid-phase-deposited barium-doped TiO 2 as a gate dielectric

Chih Chun Hu, Mon Sen Lin, Tsu Yi Wu, Feri Adriyanto, Po Wen Sze, Chang Luen Wu, Yeong Her Wang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Barium-doped TiO 2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is also demonstrated. The electrical characteristics of the MOS structure on n-doped GaN show that the leakage current density is about 5.09 × 10 -9 A/cm 2 at 1 MV/cm, and the breakdown field is more than 13 MV/cm. The maximum drain current density of the AlGaN/GaN MOSHEMTs is higher than that of HEMTs, in which a wider gate voltage swing and a lower subthreshold swing (110 mV/decade) are obtained. The gate leakage current density is significantly improved, and the gate pulse measurement shows that the current collapse is more suppressed for MOSHEMTs.

Original languageEnglish
Article number6069856
Pages (from-to)121-127
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume59
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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