AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors using oxide insulator grown by photoelectrochemical oxidation method

L. H. Huang, Shu Hao Yeh, Ching Ting Lee, Haipeng Tang, Jennifer Bardwell, James B. Webb

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

A photoelectrochemical oxidation method was used to directly grow oxide layer on AlGaN surface. The annealed oxide layer exhibited β- Ga2O3 and α-Al2O3 crystalline phases. Using a photoassisted capacitance-voltage method, a low average interface-state density of 5.1 × 1011 cm-2 · eV-1 was estimated. The directly grown oxide layer was used as gate insulator for AlGaN/GaN MOS high-electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5 V. The gate leakage currents are 50 and 2 pA at forward gate bias of VGS = 10 V and reverse gate bias of VGS = -10 V, respectively. The maximum value of gm is 50 mS/mm of VGS biased at -2.09 V.

Original languageEnglish
Pages (from-to)284-286
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number4
DOIs
Publication statusPublished - 2008 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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