AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

Li Hsien Huang; Ya Lan Ciou; Shu Hao Yen; Ching Ting Lee

doi:10.1109/EDSSC.2007.4450115

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

Li Hsien Huang, Ya Lan Ciou, Shu Hao Yen, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A photoelectrochemical oxidation method was used to directly grow oxide film on the Al_0.15Ga_0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of V_GS= -7V is 10nA. Even the reverse bias is V_GS=-60V, the leakage current is only 102nA. An unity gain cutoff frequency (f_T) of 5.6 GHz and a maximum frequency of oscillation (f_max) of 10.6 GHz were measured. These electrical performances are much better than those of GaN-based conventional MES-HEMTs.

Original language	English
Title of host publication	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages	275-278
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450115
Publication status	Published - 2007 Dec 1
Event	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan Duration: 2007 Dec 20 → 2007 Dec 22

Publication series

Name	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

Other	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Country/Territory	Taiwan
City	Tainan
Period	07-12-20 → 07-12-22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDSSC.2007.4450115

Cite this

Huang, L. H., Ciou, Y. L., Yen, S. H., & Lee, C. T. (2007). AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 275-278). Article 4450115 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450115

@inproceedings{fa92e672b10e44ef9370bbb9d4d81bb0,

title = "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer",

abstract = "A photoelectrochemical oxidation method was used to directly grow oxide film on the Al0.15Ga0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of VGS= -7V is 10nA. Even the reverse bias is VGS=-60V, the leakage current is only 102nA. An unity gain cutoff frequency (fT) of 5.6 GHz and a maximum frequency of oscillation (fmax) of 10.6 GHz were measured. These electrical performances are much better than those of GaN-based conventional MES-HEMTs.",

author = "Huang, {Li Hsien} and Ciou, {Ya Lan} and Yen, {Shu Hao} and Lee, {Ching Ting}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2007.4450115",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "275--278",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Huang, LH, Ciou, YL, Yen, SH & Lee, CT 2007, AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer. in IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450115, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, pp. 275-278, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, Taiwan, 07-12-20. https://doi.org/10.1109/EDSSC.2007.4450115

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer. / Huang, Li Hsien; Ciou, Ya Lan; Yen, Shu Hao et al.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 275-278 4450115 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

AU - Huang, Li Hsien

AU - Ciou, Ya Lan

AU - Yen, Shu Hao

AU - Lee, Ching Ting

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A photoelectrochemical oxidation method was used to directly grow oxide film on the Al0.15Ga0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of VGS= -7V is 10nA. Even the reverse bias is VGS=-60V, the leakage current is only 102nA. An unity gain cutoff frequency (fT) of 5.6 GHz and a maximum frequency of oscillation (fmax) of 10.6 GHz were measured. These electrical performances are much better than those of GaN-based conventional MES-HEMTs.

AB - A photoelectrochemical oxidation method was used to directly grow oxide film on the Al0.15Ga0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of VGS= -7V is 10nA. Even the reverse bias is VGS=-60V, the leakage current is only 102nA. An unity gain cutoff frequency (fT) of 5.6 GHz and a maximum frequency of oscillation (fmax) of 10.6 GHz were measured. These electrical performances are much better than those of GaN-based conventional MES-HEMTs.

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T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

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Y2 - 20 December 2007 through 22 December 2007

ER -

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

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