AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer

Li Hsien Huang, Ya Lan Ciou, Shu Hao Yen, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A photoelectrochemical oxidation method was used to directly grow oxide film on the Al0.15Ga0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of VGS= -7V is 10nA. Even the reverse bias is VGS=-60V, the leakage current is only 102nA. An unity gain cutoff frequency (fT) of 5.6 GHz and a maximum frequency of oscillation (fmax) of 10.6 GHz were measured. These electrical performances are much better than those of GaN-based conventional MES-HEMTs.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages275-278
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 2007 Dec 202007 Dec 22

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Huang, L. H., Ciou, Y. L., Yen, S. H., & Lee, C. T. (2007). AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using directly grown oxide layer. In IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (pp. 275-278). [4450115] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450115