AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

Ya Lan Chiou; Chi Sen Lee; Ching Ting Lee

doi:10.1063/1.3467056

AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH₄)₂S_x surface treatment

Ya Lan Chiou, Chi Sen Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH₄) ₂S_x was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH₄)₂S _x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28× 10^-6. The improved performances of the (NH₄)₂S_x-treated MOS-HEMTs were attributed to the reduction in surface states.

Original language	English
Article number	032107
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467056
Publication status	Published - 2010 Jul 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3467056

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@article{37516f4713aa4f418c9c3f751896a37b,

title = "AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment",

abstract = "The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH4) 2Sx was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH4)2S x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28× 10-6. The improved performances of the (NH4)2Sx-treated MOS-HEMTs were attributed to the reduction in surface states.",

author = "Chiou, {Ya Lan} and Lee, {Chi Sen} and Lee, {Ching Ting}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China. The epitaxial wafers were grown by Institute for Microstructural Sciences, National Research Council, Canada.",

year = "2010",

month = jul,

day = "19",

doi = "10.1063/1.3467056",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH4)2Sx surface treatment

AU - Chiou, Ya Lan

AU - Lee, Chi Sen

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China. The epitaxial wafers were grown by Institute for Microstructural Sciences, National Research Council, Canada.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH4) 2Sx was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH4)2S x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28× 10-6. The improved performances of the (NH4)2Sx-treated MOS-HEMTs were attributed to the reduction in surface states.

AB - The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ZnO gate insulator deposited using a vapor cooling condensation system were fabricated. The AlGaN surface treatment using (NH4) 2Sx was performed to improve the quality of the interface between the ZnO layer and AlGaN layer. The (NH4)2S x-treated MOS-HEMTs exhibited a higher saturation drain-source current of 0.74 A/mm, a maximum extrinsic transconductance of 200 mS/mm, an unit gain cutoff frequency of 9.1 GHz, a maximum frequency of oscillation of 17.1 GHz, and the Hooge's coefficient of 8.28× 10-6. The improved performances of the (NH4)2Sx-treated MOS-HEMTs were attributed to the reduction in surface states.

UR - http://www.scopus.com/inward/record.url?scp=77956207544&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956207544&partnerID=8YFLogxK

U2 - 10.1063/1.3467056

DO - 10.1063/1.3467056

M3 - Article

AN - SCOPUS:77956207544

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032107

ER -

AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with ZnO gate layer and (NH₄)₂S_x surface treatment

Abstract

All Science Journal Classification (ASJC) codes

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