AlGaN/GaN modulation-doped field-effect transistors with An Mg-doped carrier confinement layer

Shoou Jinn Chang, Sun Chin Wei, Yan Kuin Su, Chun Hsing Liu, Shih Chih Chen, Uang Heay Liaw, Tzong Yow Tsai, Tzu Hsuan Hsu

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with and without the Mg-doped semi-insulating carrier confinement layer were prepared and a detailed study on the electrical properties of these samples was performed. The addition of the Mg-doped semi-insulating carrier confinement layer resulted in the degradation of crystal quality. Thus, higher values of gm, IDS and the gate voltage swing are achieved by conventional MODFETs. The source-to-drain (S-D) leakage current of conventional MODFETs was also higher, since carriers could flow through the thick unintentionally doped GaN layer. However, the S-D leakage current was reduced from 50 mA/mm to 6 mA/mm with the insertion of the Mg-doped semi-insulating carrier confinement layer.

Original languageEnglish
Pages (from-to)3316-3319
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
DOIs
Publication statusPublished - 2003 Jun

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'AlGaN/GaN modulation-doped field-effect transistors with An Mg-doped carrier confinement layer'. Together they form a unique fingerprint.

Cite this