TY - JOUR
T1 - AlGaN/GaN MOS-HEMTs with gate ZnO dielectric layer
AU - Lee, Ching Ting
AU - Chiou, Ya Lan
AU - Lee, Chi Sen
N1 - Funding Information:
Manuscript received July 17, 2010; revised July 30, 2010; accepted August 3, 2010. Date of publication September 27, 2010; date of current version October 22, 2010. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor J. A. del Alamo.
PY - 2010/11
Y1 - 2010/11
N2 - The vapor cooling condensation system is used to grow ZnO insulator films of low carrier concentration and high resistivity as the gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). The saturation drainsource current and the maximum extrinsic transconductance are measured as 0.61 A/mm and 153 mS/mm, respectively. The gate leakage currents, determined with the forward gate bias of VGS = 3.5V and the reverse gate bias of VGS = -12V, applied are 1.21×10-4A/mm and 7.16×10-6A/mm, respectively. The unit gain cutoff frequency and maximum frequency of the oscillation are also measured as 7.2 and 11.5 GHz, respectively. The low-frequency noise obtained is well fitted with a 1/f function in the linear region. Hooge's coefficient α is extracted as 9.74×10-5 when the MOS-HEMTs operate at 100 Hz and VGS = -4V. The current recoveries of the gate and drain lags are determined to be 61% and 47% for the MOS-HEMTs, respectively.
AB - The vapor cooling condensation system is used to grow ZnO insulator films of low carrier concentration and high resistivity as the gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). The saturation drainsource current and the maximum extrinsic transconductance are measured as 0.61 A/mm and 153 mS/mm, respectively. The gate leakage currents, determined with the forward gate bias of VGS = 3.5V and the reverse gate bias of VGS = -12V, applied are 1.21×10-4A/mm and 7.16×10-6A/mm, respectively. The unit gain cutoff frequency and maximum frequency of the oscillation are also measured as 7.2 and 11.5 GHz, respectively. The low-frequency noise obtained is well fitted with a 1/f function in the linear region. Hooge's coefficient α is extracted as 9.74×10-5 when the MOS-HEMTs operate at 100 Hz and VGS = -4V. The current recoveries of the gate and drain lags are determined to be 61% and 47% for the MOS-HEMTs, respectively.
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U2 - 10.1109/LED.2010.2066543
DO - 10.1109/LED.2010.2066543
M3 - Article
AN - SCOPUS:77958608437
SN - 0741-3106
VL - 31
SP - 1220
EP - 1223
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 11
M1 - 5585700
ER -