AlGaN/GaN MOS-HEMTs with gate ZnO dielectric layer

Ching Ting Lee, Ya Lan Chiou, Chi Sen Lee

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

The vapor cooling condensation system is used to grow ZnO insulator films of low carrier concentration and high resistivity as the gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). The saturation drainsource current and the maximum extrinsic transconductance are measured as 0.61 A/mm and 153 mS/mm, respectively. The gate leakage currents, determined with the forward gate bias of VGS = 3.5V and the reverse gate bias of VGS = -12V, applied are 1.21×10-4A/mm and 7.16×10-6A/mm, respectively. The unit gain cutoff frequency and maximum frequency of the oscillation are also measured as 7.2 and 11.5 GHz, respectively. The low-frequency noise obtained is well fitted with a 1/f function in the linear region. Hooge's coefficient α is extracted as 9.74×10-5 when the MOS-HEMTs operate at 100 Hz and VGS = -4V. The current recoveries of the gate and drain lags are determined to be 61% and 47% for the MOS-HEMTs, respectively.

Original languageEnglish
Article number5585700
Pages (from-to)1220-1223
Number of pages4
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
Publication statusPublished - 2010 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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