AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

H. Y. Liu, C. S. Lee, Wei-Chou Hsu, T. T. Wu, H. S. Huang, S. F. Chen, Y. C. Yang, B. C. Chiang, H. C. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO 2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη 2 , including drain-source current density (I DS ) at V GS = 0 V (I DSS0 ) of 384 (342) mA/mm, maximum I DS (I DS, max ) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BV GD ) of -155 (-105) V, turn-on voltage (V on ) of 3.8 (1.8) V, on-state breakdown (BV DS ) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (I on /I off ) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

Original languageEnglish
Title of host publication2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages578-580
Number of pages3
ISBN (Electronic)9781479944033
DOIs
Publication statusPublished - 2015 Aug 14
Event11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
Duration: 2015 Jun 92015 Jun 12

Publication series

NameProceedings of the International Conference on Power Electronics and Drive Systems
Volume2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
CountryAustralia
CitySydney
Period15-06-0915-06-12

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liu, H. Y., Lee, C. S., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., ... Chang, H. C. (2015). AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (pp. 578-580). [7203398] (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203398