AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

H. Y. Liu; C. S. Lee; W. C. Hsu; T. T. Wu; H. S. Huang; S. F. Chen; Y. C. Yang; B. C. Chiang; H. C. Chang

doi:10.1109/PEDS.2015.7203398

AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

H. Y. Liu
, C. S. Lee
, W. C. Hsu
, T. T. Wu
, H. S. Huang
, S. F. Chen
, Y. C. Yang
, B. C. Chiang
, H. C. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO₂ gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη², including drain-source current density (I_DS) at V_GS = 0 V (I_DSS0) of 384 (342) mA/mm, maximum I_DS (I_{DS, max}) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BV_GD) of -155 (-105) V, turn-on voltage (V_on) of 3.8 (1.8) V, on-state breakdown (BV_DS) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (I_on/I_off) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

Original language	English
Title of host publication	2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	578-580
Number of pages	3
ISBN (Electronic)	9781479944033
DOIs	https://doi.org/10.1109/PEDS.2015.7203398
Publication status	Published - 2015 Aug 14
Event	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia Duration: 2015 Jun 9 → 2015 Jun 12

Publication series

Name	Proceedings of the International Conference on Power Electronics and Drive Systems
Volume	2015-August

Other

Other	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
Country/Territory	Australia
City	Sydney
Period	15-06-09 → 15-06-12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/PEDS.2015.7203398

Cite this

Liu, H. Y., Lee, C. S., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C., & Chang, H. C. (2015). AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition. In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (pp. 578-580). Article 7203398 (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203398

Liu, H. Y. ; Lee, C. S. ; Hsu, W. C. et al. / AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 578-580 (Proceedings of the International Conference on Power Electronics and Drive Systems).

@inproceedings{65c827ca403b4493a309c6899a5eee66,

title = "AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition",

abstract = "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη2, including drain-source current density (IDS) at VGS = 0 V (IDSS0) of 384 (342) mA/mm, maximum IDS (IDS, max) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-on voltage (Von) of 3.8 (1.8) V, on-state breakdown (BVDS) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (Ion/Ioff) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.",

author = "Liu, \{H. Y.\} and Lee, \{C. S.\} and Hsu, \{W. C.\} and Wu, \{T. T.\} and Huang, \{H. S.\} and Chen, \{S. F.\} and Yang, \{Y. C.\} and Chiang, \{B. C.\} and Chang, \{H. C.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 ; Conference date: 09-06-2015 Through 12-06-2015",

year = "2015",

month = aug,

day = "14",

doi = "10.1109/PEDS.2015.7203398",

language = "English",

series = "Proceedings of the International Conference on Power Electronics and Drive Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "578--580",

booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",

address = "United States",

}

Liu, HY, Lee, CS, Hsu, WC, Wu, TT, Huang, HS, Chen, SF, Yang, YC, Chiang, BC & Chang, HC 2015, AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition. in 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015., 7203398, Proceedings of the International Conference on Power Electronics and Drive Systems, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. 578-580, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 15-06-09. https://doi.org/10.1109/PEDS.2015.7203398

AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition. / Liu, H. Y.; Lee, C. S.; Hsu, W. C. et al.
2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 578-580 7203398 (Proceedings of the International Conference on Power Electronics and Drive Systems; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

AU - Liu, H. Y.

AU - Lee, C. S.

AU - Hsu, W. C.

AU - Wu, T. T.

AU - Huang, H. S.

AU - Chen, S. F.

AU - Yang, Y. C.

AU - Chiang, B. C.

AU - Chang, H. C.

PY - 2015/8/14

Y1 - 2015/8/14

N2 - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη2, including drain-source current density (IDS) at VGS = 0 V (IDSS0) of 384 (342) mA/mm, maximum IDS (IDS, max) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-on voltage (Von) of 3.8 (1.8) V, on-state breakdown (BVDS) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (Ion/Ioff) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

AB - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k TiO2 gate dielectric (k = 53.6) formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) method has been investigated. Pulse I-V and low-frequency noise spectra (1/f) are conducted to characterize the interface property. Enhanced device performances have been accomplished for the devised MOS-HEMT (Schottky-gate HEMT) for the gate dimensions of 1 × 100 μιη2, including drain-source current density (IDS) at VGS = 0 V (IDSS0) of 384 (342) mA/mm, maximum IDS (IDS, max) of 650 (511) mA/mm, maximum extrinsic transconductance (gm, max) of 107 (110) mS/mm, two-terminal gate-drain breakdown voltage (BVGD) of -155 (-105) V, turn-on voltage (Von) of 3.8 (1.8) V, on-state breakdown (BVDS) of 139 (94) V, gate-voltage swing (GVS) of 2.7 (1.7) V, and on/off current ratio (Ion/Ioff) of 4.5 × 105 (3.5 × 102). Consequently, the present MOS-HEMT design by using the cost-effective USPD method is suitable for high-power RF circuit applications.

UR - https://www.scopus.com/pages/publications/84952001597

UR - https://www.scopus.com/pages/publications/84952001597#tab=citedBy

U2 - 10.1109/PEDS.2015.7203398

DO - 10.1109/PEDS.2015.7203398

M3 - Conference contribution

AN - SCOPUS:84952001597

T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 578

EP - 580

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015

Y2 - 9 June 2015 through 12 June 2015

ER -

Liu HY, Lee CS, Hsu WC, Wu TT, Huang HS, Chen SF et al. AlGaN/GaN MOS-HEMTs with TiO₂ gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition. In 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 578-580. 7203398. (Proceedings of the International Conference on Power Electronics and Drive Systems). doi: 10.1109/PEDS.2015.7203398