AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

Ya Lan Chiou, Ching Ting Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages1222-1224
Number of pages3
DOIs
Publication statusPublished - 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: 2010 Nov 212010 Nov 24

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period10-11-2110-11-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

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