AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

Ya Lan Chiou; Ching Ting Lee

doi:10.1109/TENCON.2010.5686365

AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

Ya Lan Chiou, Ching Ting Lee

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface.

Original language	English
Title of host publication	TENCON 2010 - 2010 IEEE Region 10 Conference
Pages	1222-1224
Number of pages	3
DOIs	https://doi.org/10.1109/TENCON.2010.5686365
Publication status	Published - 2010
Event	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: 2010 Nov 21 → 2010 Nov 24

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other	2010 IEEE Region 10 Conference, TENCON 2010
Country/Territory	Japan
City	Fukuoka
Period	10-11-21 → 10-11-24

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1109/TENCON.2010.5686365

Cite this

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title = "AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment",

abstract = "AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface.",

author = "Chiou, {Ya Lan} and Lee, {Ching Ting}",

year = "2010",

doi = "10.1109/TENCON.2010.5686365",

language = "English",

isbn = "9781424468904",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

pages = "1222--1224",

booktitle = "TENCON 2010 - 2010 IEEE Region 10 Conference",

note = "2010 IEEE Region 10 Conference, TENCON 2010 ; Conference date: 21-11-2010 Through 24-11-2010",

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T1 - AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

AU - Chiou, Ya Lan

AU - Lee, Ching Ting

PY - 2010

Y1 - 2010

N2 - AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface.

AB - AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs exhibited a saturation drain-source current of 0.85 A/mm, a peak extrinsic transconductance of 207 mS/mm, and an off-state breakdown voltage larger than 100V. This significant improvement was owing to the reduction in surface state density, which was resulted from the decrease of Ga dangling bonds and the passivation of N vacancies on the AlGaN surface.

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U2 - 10.1109/TENCON.2010.5686365

DO - 10.1109/TENCON.2010.5686365

M3 - Conference contribution

AN - SCOPUS:79951663690

SN - 9781424468904

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

SP - 1222

EP - 1224

BT - TENCON 2010 - 2010 IEEE Region 10 Conference

T2 - 2010 IEEE Region 10 Conference, TENCON 2010

Y2 - 21 November 2010 through 24 November 2010

ER -

AlGaN/GaN MOS-HEMTs with ZnO gate insulator and chlorine surface treatment

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