AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition

J. J. Huang, P. W. Sze, S. K. Lin, W. C. Lai, Y. H. Wang, M. P. Houng

Research output: Contribution to journalConference articlepeer-review

Abstract

An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The self-align and self-passivation process of LPD can ease the device fabrication. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. Comparison between the AlGaN/GaN MOSHFETs and heterostructure field effect transistors (HFETs) will be made. Lower leakage currents, larger gate swing voltages and flatter transconductance ranges can be seen in MOSHFETs.

Original languageEnglish
Pages (from-to)94-96
Number of pages3
JournalPhysica Scripta T
VolumeT114
DOIs
Publication statusPublished - 2004
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 2003 Aug 252003 Aug 27

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

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