AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition

J. J. Huang, P. W. Sze, S. K. Lin, W. C. Lai, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalConference article

Abstract

An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The self-align and self-passivation process of LPD can ease the device fabrication. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. Comparison between the AlGaN/GaN MOSHFETs and heterostructure field effect transistors (HFETs) will be made. Lower leakage currents, larger gate swing voltages and flatter transconductance ranges can be seen in MOSHFETs.

Original languageEnglish
Pages (from-to)94-96
Number of pages3
JournalPhysica Scripta T
VolumeT114
DOIs
Publication statusPublished - 2004 Dec 1
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 2003 Aug 252003 Aug 27

Fingerprint

AlGaN
Field-effect Transistor
Heterostructures
SiO2
metal oxide semiconductors
Oxides
Semiconductors
liquid phases
field effect transistors
Metals
Liquid
Passivation
Leakage Current
transconductance
passivity
Fabrication
Silicon
leakage
Voltage
silicon dioxide

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

Cite this

Huang, J. J. ; Sze, P. W. ; Lin, S. K. ; Lai, W. C. ; Wang, Yeong-Her ; Houng, Mau-phon. / AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition. In: Physica Scripta T. 2004 ; Vol. T114. pp. 94-96.
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AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition. / Huang, J. J.; Sze, P. W.; Lin, S. K.; Lai, W. C.; Wang, Yeong-Her; Houng, Mau-phon.

In: Physica Scripta T, Vol. T114, 01.12.2004, p. 94-96.

Research output: Contribution to journalConference article

TY - JOUR

T1 - AlGaN/GaN MOSHFET with a SiO2 gate by liquid phase deposition

AU - Huang, J. J.

AU - Sze, P. W.

AU - Lin, S. K.

AU - Lai, W. C.

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 2004/12/1

Y1 - 2004/12/1

N2 - An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The self-align and self-passivation process of LPD can ease the device fabrication. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. Comparison between the AlGaN/GaN MOSHFETs and heterostructure field effect transistors (HFETs) will be made. Lower leakage currents, larger gate swing voltages and flatter transconductance ranges can be seen in MOSHFETs.

AB - An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The self-align and self-passivation process of LPD can ease the device fabrication. AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. Comparison between the AlGaN/GaN MOSHFETs and heterostructure field effect transistors (HFETs) will be made. Lower leakage currents, larger gate swing voltages and flatter transconductance ranges can be seen in MOSHFETs.

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