AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

P. C. Chang; C. H. Chen; S. J. Chang; Y. K. Su; C. L. Yu; P. C. Chen; C. H. Wang

doi:10.1088/0268-1242/19/12/004

AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, P. C. Chen, C. H. Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

AlGaN/GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated. It was found that the transmittances of Ni/Au films increased while the photodetector dark currents became significantly lower after annealing. With a 5 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 2.3 × 10⁴ and 0.166 A W^-1 for photodetector photo-CVD annealed at 550°C.

Original language	English
Pages (from-to)	1354-1357
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	19
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/19/12/004
Publication status	Published - 2004 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/19/12/004

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title = "AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts",

abstract = "AlGaN/GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated. It was found that the transmittances of Ni/Au films increased while the photodetector dark currents became significantly lower after annealing. With a 5 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 2.3 × 104 and 0.166 A W-1 for photodetector photo-CVD annealed at 550°C.",

author = "Chang, {P. C.} and Chen, {C. H.} and Chang, {S. J.} and Su, {Y. K.} and Yu, {C. L.} and Chen, {P. C.} and Wang, {C. H.}",

year = "2004",

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doi = "10.1088/0268-1242/19/12/004",

language = "English",

volume = "19",

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TY - JOUR

T1 - AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

AU - Chang, P. C.

AU - Chen, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Yu, C. L.

AU - Chen, P. C.

AU - Wang, C. H.

PY - 2004/12

Y1 - 2004/12

N2 - AlGaN/GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated. It was found that the transmittances of Ni/Au films increased while the photodetector dark currents became significantly lower after annealing. With a 5 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 2.3 × 104 and 0.166 A W-1 for photodetector photo-CVD annealed at 550°C.

AB - AlGaN/GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with photo-chemical vapour deposition (photo-CVD) annealed Ni/Au semi-transparent contacts were fabricated. It was found that the transmittances of Ni/Au films increased while the photodetector dark currents became significantly lower after annealing. With a 5 V applied bias, it was found that the photocurrent to dark current contrast ratio and the maximum responsivity were 2.3 × 104 and 0.166 A W-1 for photodetector photo-CVD annealed at 550°C.

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M3 - Article

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

ER -

AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts

Abstract

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