AlGaNGaN Schottky barrier diodes with multi-MgxNyGaN buffer

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, C. H. Kuo

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.

Original languageEnglish
Pages (from-to)H716-H719
JournalJournal of the Electrochemical Society
Volume155
Issue number10
DOIs
Publication statusPublished - 2008 Sep 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'AlGaNGaN Schottky barrier diodes with multi-Mg<sub>x</sub>N<sub>y</sub>GaN buffer'. Together they form a unique fingerprint.

Cite this