AlGaNGaN Schottky barrier diodes with multi-MgxNyGaN buffer

K. H. Lee; S. J. Chang; P. C. Chang; Y. C. Wang; C. H. Kuo

doi:10.1149/1.2959117

AlGaNGaN Schottky barrier diodes with multi-Mg_xN_yGaN buffer

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, C. H. Kuo

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.

Original language	English
Pages (from-to)	H716-H719
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	10
DOIs	https://doi.org/10.1149/1.2959117
Publication status	Published - 2008 Sept 22

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2959117

Cite this

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abstract = "AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.",

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AU - Lee, K. H.

AU - Chang, S. J.

AU - Chang, P. C.

AU - Wang, Y. C.

AU - Kuo, C. H.

PY - 2008/9/22

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N2 - AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.

AB - AlGaNGaN Schottky barrier diodes (SBDs) with multi- Mgx Ny GaN buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- Mgx Ny GaN buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- Mgx Ny GaN buffer.

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