AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang; K. H. Lee; P. C. Chang; Y. C. Wang; C. H. Kuo; S. L. Wu

doi:10.1109/JSEN.2008.2011070

AlGaN/GaN Schottky barrier photodetector with multi-Mg_xN _y/GaN buffer

S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. H. Kuo, S. L. Wu

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg_xN_y/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg_xN_y/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

Original language	English
Article number	4749393
Pages (from-to)	87-92
Number of pages	6
Journal	IEEE Sensors Journal
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/JSEN.2008.2011070
Publication status	Published - 2009 Feb

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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@article{fa646978a4274ddf92248fa96c7b88da,

title = "AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer",

abstract = "AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.",

author = "Chang, {S. J.} and Lee, {K. H.} and Chang, {P. C.} and Wang, {Y. C.} and Kuo, {C. H.} and Wu, {S. L.}",

note = "Funding Information: Manuscript received May 23, 2008; revised July 19, 2008; accepted July 21, 2008. Current version published January 09, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = feb,

doi = "10.1109/JSEN.2008.2011070",

language = "English",

volume = "9",

pages = "87--92",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

AU - Chang, S. J.

AU - Lee, K. H.

AU - Chang, P. C.

AU - Wang, Y. C.

AU - Kuo, C. H.

AU - Wu, S. L.

N1 - Funding Information: Manuscript received May 23, 2008; revised July 19, 2008; accepted July 21, 2008. Current version published January 09, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/2

Y1 - 2009/2

N2 - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

AB - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

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