AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. H. Kuo, S. L. Wu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

Original languageEnglish
Article number4749393
Pages (from-to)87-92
Number of pages6
JournalIEEE Sensors Journal
Volume9
Issue number2
DOIs
Publication statusPublished - 2009 Feb 1

Fingerprint

Photodetectors
photometers
Heterojunctions
buffers
Leakage currents
rejection
leakage
Temperature

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Chang, S. J., Lee, K. H., Chang, P. C., Wang, Y. C., Kuo, C. H., & Wu, S. L. (2009). AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer. IEEE Sensors Journal, 9(2), 87-92. [4749393]. https://doi.org/10.1109/JSEN.2008.2011070
Chang, S. J. ; Lee, K. H. ; Chang, P. C. ; Wang, Y. C. ; Kuo, C. H. ; Wu, S. L. / AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer. In: IEEE Sensors Journal. 2009 ; Vol. 9, No. 2. pp. 87-92.
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Chang, SJ, Lee, KH, Chang, PC, Wang, YC, Kuo, CH & Wu, SL 2009, 'AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer', IEEE Sensors Journal, vol. 9, no. 2, 4749393, pp. 87-92. https://doi.org/10.1109/JSEN.2008.2011070

AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer. / Chang, S. J.; Lee, K. H.; Chang, P. C.; Wang, Y. C.; Kuo, C. H.; Wu, S. L.

In: IEEE Sensors Journal, Vol. 9, No. 2, 4749393, 01.02.2009, p. 87-92.

Research output: Contribution to journalArticle

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AU - Chang, S. J.

AU - Lee, K. H.

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AU - Wang, Y. C.

AU - Kuo, C. H.

AU - Wu, S. L.

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AB - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

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