Abstract
AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.
| Original language | English |
|---|---|
| Article number | 4749393 |
| Pages (from-to) | 87-92 |
| Number of pages | 6 |
| Journal | IEEE Sensors Journal |
| Volume | 9 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2009 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Instrumentation
- Electrical and Electronic Engineering
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AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer. / Chang, S. J.; Lee, K. H.; Chang, P. C.; Wang, Y. C.; Kuo, C. H.; Wu, S. L.
In: IEEE Sensors Journal, Vol. 9, No. 2, 4749393, 01.02.2009, p. 87-92.Research output: Contribution to journal › Article
TY - JOUR
T1 - AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer
AU - Chang, S. J.
AU - Lee, K. H.
AU - Chang, P. C.
AU - Wang, Y. C.
AU - Kuo, C. H.
AU - Wu, S. L.
PY - 2009/2/1
Y1 - 2009/2/1
N2 - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.
AB - AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.
UR - http://www.scopus.com/inward/record.url?scp=68349154812&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=68349154812&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2008.2011070
DO - 10.1109/JSEN.2008.2011070
M3 - Article
AN - SCOPUS:68349154812
VL - 9
SP - 87
EP - 92
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
SN - 1530-437X
IS - 2
M1 - 4749393
ER -