Abstract
AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.
Original language | English |
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Article number | 4749393 |
Pages (from-to) | 87-92 |
Number of pages | 6 |
Journal | IEEE Sensors Journal |
Volume | 9 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2009 Feb |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Electrical and Electronic Engineering