AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers

P. C. Chang; K. T. Lam; C. H. Chen; Shoou-Jinn Chang; C. L. Yu; C. H. Liu

doi:10.1049/iet-opt:20070007

AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers

P. C. Chang, K. T. Lam, C. H. Chen, Shoou-Jinn Chang, C. L. Yu, C. H. Liu

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

GaN-based metal-insulator-semiconductor (MIS) two-dimensional electron gas ultraviolet (UV) photodetectors with sputtered SiO₂ insulation and passivation layers were fabricated. With a 5V applied bias and 35mW deuterium lamp irradiation, it was found that the photocurrent to dark current contrast ratio was 2.1×10⁴ for the MIS photodetector with passivation. It was also found that UV to visible rejection ratio of such MIS photodetector with passivation was more than three orders of magnitude, while the responsivity was 0.144A/W with a 5V applied bias and a 350nm incident light wavelength. Such a result was found to be much larger than those observed from the metal-semiconductor-metal photodetector and the MIS photodetector without passivation.

Original language	English
Pages (from-to)	55-57
Number of pages	3
Journal	IET Optoelectronics
Volume	2
Issue number	1
DOIs	https://doi.org/10.1049/iet-opt:20070007
Publication status	Published - 2008 Feb 22

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

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10.1049/iet-opt:20070007

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title = "AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers",

abstract = "GaN-based metal-insulator-semiconductor (MIS) two-dimensional electron gas ultraviolet (UV) photodetectors with sputtered SiO2 insulation and passivation layers were fabricated. With a 5V applied bias and 35mW deuterium lamp irradiation, it was found that the photocurrent to dark current contrast ratio was 2.1×104 for the MIS photodetector with passivation. It was also found that UV to visible rejection ratio of such MIS photodetector with passivation was more than three orders of magnitude, while the responsivity was 0.144A/W with a 5V applied bias and a 350nm incident light wavelength. Such a result was found to be much larger than those observed from the metal-semiconductor-metal photodetector and the MIS photodetector without passivation.",

author = "Chang, {P. C.} and Lam, {K. T.} and Chen, {C. H.} and Shoou-Jinn Chang and Yu, {C. L.} and Liu, {C. H.}",

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T1 - AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers

AU - Chang, P. C.

AU - Lam, K. T.

AU - Chen, C. H.

AU - Chang, Shoou-Jinn

AU - Yu, C. L.

AU - Liu, C. H.

PY - 2008/2/22

Y1 - 2008/2/22

N2 - GaN-based metal-insulator-semiconductor (MIS) two-dimensional electron gas ultraviolet (UV) photodetectors with sputtered SiO2 insulation and passivation layers were fabricated. With a 5V applied bias and 35mW deuterium lamp irradiation, it was found that the photocurrent to dark current contrast ratio was 2.1×104 for the MIS photodetector with passivation. It was also found that UV to visible rejection ratio of such MIS photodetector with passivation was more than three orders of magnitude, while the responsivity was 0.144A/W with a 5V applied bias and a 350nm incident light wavelength. Such a result was found to be much larger than those observed from the metal-semiconductor-metal photodetector and the MIS photodetector without passivation.

AB - GaN-based metal-insulator-semiconductor (MIS) two-dimensional electron gas ultraviolet (UV) photodetectors with sputtered SiO2 insulation and passivation layers were fabricated. With a 5V applied bias and 35mW deuterium lamp irradiation, it was found that the photocurrent to dark current contrast ratio was 2.1×104 for the MIS photodetector with passivation. It was also found that UV to visible rejection ratio of such MIS photodetector with passivation was more than three orders of magnitude, while the responsivity was 0.144A/W with a 5V applied bias and a 350nm incident light wavelength. Such a result was found to be much larger than those observed from the metal-semiconductor-metal photodetector and the MIS photodetector without passivation.

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AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers

Abstract

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