@inproceedings{46bfbd3f915440a09fd305edab12710e,
title = "AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRS) prepared by MOCVD",
abstract = "A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRS) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-Terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are,obtained for the studied SNDRS device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.",
author = "Liu, {Wen Chau} and Cheng, {Shiou Ying} and Chang, {Wen Lung} and Pan, {Hsi Jen} and Shie, {Yung Hsin}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 1998 International Conference on Microwave and Millimeter Wave Technology, ICMMT 1998 ; Conference date: 18-08-1998 Through 20-08-1998",
year = "1998",
doi = "10.1109/ICMMT.1998.768247",
language = "English",
series = "ICMMT 1998 - 1998 International Conference on Microwave and Millimeter Wave Technology, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "138--141",
editor = "Fu-Jiang Liao",
booktitle = "ICMMT 1998 - 1998 International Conference on Microwave and Millimeter Wave Technology, Proceedings",
address = "United States",
}