AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

Shiou Ying Cheng, Po Hung Lin, Wei Chou Wang, Jing Yuh Chen, Wen Chau Liu

Research output: Contribution to journalConference articlepeer-review

Abstract

A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n+-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n+-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.

Original languageEnglish
Pages (from-to)77-78
Number of pages2
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: 1997 May 111997 May 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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