AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

Shiou Ying Cheng; Po Hung Lin; Wei Chou Wang; Jing Yuh Chen; Wen Chau Liu

AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

Shiou Ying Cheng
, Po Hung Lin
, Wei Chou Wang
, Jing Yuh Chen
, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n⁺-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n⁺-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.

Original language	English
Pages (from-to)	77-78
Number of pages	2
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1997
Event	Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA Duration: 1997 May 11 → 1997 May 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{5d8b20b815584d37824b44bc1e880b64,

title = "AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD",

abstract = "A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n+-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n+-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.",

author = "Cheng, \{Shiou Ying\} and Lin, \{Po Hung\} and Wang, \{Wei Chou\} and Chen, \{Jing Yuh\} and Liu, \{Wen Chau\}",

year = "1997",

language = "English",

pages = "77--78",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-1997 Through 15-05-1997",

}

TY - JOUR

T1 - AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

AU - Cheng, Shiou Ying

AU - Lin, Po Hung

AU - Wang, Wei Chou

AU - Chen, Jing Yuh

AU - Liu, Wen Chau

PY - 1997

Y1 - 1997

N2 - A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n+-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n+-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.

AB - A new GaInAs/AlInAs long-period-superlattice resonant tunneling transistor (LPSRTT) with a 20-period i-AlGaAs/n+-GaInAs superlattice was demonstrated. The superlattice was grown by metallorganic chemical vapor deposition on a (100) oriented n+-InP substrate. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped negative differential resistance phenomenon resulting from room temperature through the superlattice is obtained in the studied LPSRTT device at 77 K.

UR - https://www.scopus.com/pages/publications/0030707188

UR - https://www.scopus.com/pages/publications/0030707188#tab=citedBy

M3 - Conference article

AN - SCOPUS:0030707188

SN - 1092-8669

SP - 77

EP - 78

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 1997 through 15 May 1997

ER -

AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

Abstract

All Science Journal Classification (ASJC) codes

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