AlInN resistive ammonia gas sensors

W. Y. Weng; S. J. Chang; T. J. Hsueh; C. L. Hsu; M. J. Li; W. C. Lai

doi:10.1016/j.snb.2009.04.017

AlInN resistive ammonia gas sensors

W. Y. Weng
, S. J. Chang
, T. J. Hsueh
, C. L. Hsu
, M. J. Li
, W. C. Lai

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH₃ gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH₃ gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH₃ gas was 500, 1000, 2000 and 4000 ppm, respectively.

Original language	English
Pages (from-to)	139-142
Number of pages	4
Journal	Sensors and Actuators, B: Chemical
Volume	140
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2009.04.017
Publication status	Published - 2009 Jun 18

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2009.04.017

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title = "AlInN resistive ammonia gas sensors",

abstract = "We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.",

author = "Weng, \{W. Y.\} and Chang, \{S. J.\} and Hsueh, \{T. J.\} and Hsu, \{C. L.\} and Li, \{M. J.\} and Lai, \{W. C.\}",

note = "Funding Information: This work was granted by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. ",

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doi = "10.1016/j.snb.2009.04.017",

language = "English",

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journal = "Sensors and Actuators, B: Chemical",

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T1 - AlInN resistive ammonia gas sensors

AU - Weng, W. Y.

AU - Chang, S. J.

AU - Hsueh, T. J.

AU - Hsu, C. L.

AU - Li, M. J.

AU - Lai, W. C.

N1 - Funding Information: This work was granted by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700). This work was also in part supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2009/6/18

Y1 - 2009/6/18

N2 - We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.

AB - We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.

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DO - 10.1016/j.snb.2009.04.017

M3 - Article

AN - SCOPUS:66949135488

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SP - 139

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JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1

ER -

AlInN resistive ammonia gas sensors

Abstract

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