Alkanethiolate self-assembled monolayers as a negative or positive resist for electron lithography

Yi Te Wu; Jiunn Der Liao; Chih Chiang Weng; Yi Ta Hesieh; Chia Hao Chen; Ming Chen Wang; Michael Zharnikov

doi:10.1021/jp808617y

Alkanethiolate self-assembled monolayers as a negative or positive resist for electron lithography

Yi Te Wu, Jiunn Der Liao, Chih Chiang Weng, Yi Ta Hesieh, Chia Hao Chen, Ming Chen Wang, Michael Zharnikov

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8-10 mC/cm² (50 ev electrons) under the conditions of our experiments.

Original language	English
Pages (from-to)	4543-4548
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	113
Issue number	11
DOIs	https://doi.org/10.1021/jp808617y
Publication status	Published - 2009 Mar 19

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

Access to Document

10.1021/jp808617y

Cite this

@article{327ac8555bdc487e8353102aee60acc1,

title = "Alkanethiolate self-assembled monolayers as a negative or positive resist for electron lithography",

abstract = "Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8-10 mC/cm2 (50 ev electrons) under the conditions of our experiments.",

author = "Wu, {Yi Te} and Liao, {Jiunn Der} and Weng, {Chih Chiang} and Hesieh, {Yi Ta} and Chen, {Chia Hao} and Wang, {Ming Chen} and Michael Zharnikov",

year = "2009",

month = mar,

day = "19",

doi = "10.1021/jp808617y",

language = "English",

volume = "113",

pages = "4543--4548",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Alkanethiolate self-assembled monolayers as a negative or positive resist for electron lithography

AU - Wu, Yi Te

AU - Liao, Jiunn Der

AU - Weng, Chih Chiang

AU - Hesieh, Yi Ta

AU - Chen, Chia Hao

AU - Wang, Ming Chen

AU - Zharnikov, Michael

PY - 2009/3/19

Y1 - 2009/3/19

N2 - Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8-10 mC/cm2 (50 ev electrons) under the conditions of our experiments.

AB - Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8-10 mC/cm2 (50 ev electrons) under the conditions of our experiments.

UR - http://www.scopus.com/inward/record.url?scp=65249128008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249128008&partnerID=8YFLogxK

U2 - 10.1021/jp808617y

DO - 10.1021/jp808617y

M3 - Article

AN - SCOPUS:65249128008

VL - 113

SP - 4543

EP - 4548

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 11

ER -

Alkanethiolate self-assembled monolayers as a negative or positive resist for electron lithography

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this