Alkanethiolate self-assembled monolayers as a negative or positive resist for electron lithography

Yi Te Wu, Jiunn-Der Liao, Chih Chiang Weng, Yi Ta Hesieh, Chia Hao Chen, Ming Chen Wang, Michael Zharnikov

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Taking self-assembled monolayers (SAMs) of octadecanethiol (ODT) on Au(111) as a test system, we demonstrate that aliphatic SAMs can serve as both positive and negative resist materials for electron-beam lithography. This is a principally new finding, since these systems are generally considered as positive resists only and no negative resist behavior has been reported so far. The behavior of the SAM resist was found to be dependent on the irradiation dose and explained by the dominance of different irradiation-induced processes at different stages of electron-beam treatment. A negative resist performance was only observed at low irradiation doses. The transition from the negative to positive resist behavior occurred at 8-10 mC/cm2 (50 ev electrons) under the conditions of our experiments.

Original languageEnglish
Pages (from-to)4543-4548
Number of pages6
JournalJournal of Physical Chemistry C
Volume113
Issue number11
DOIs
Publication statusPublished - 2009 Mar 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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