Abstract
An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.
| Translated title of the contribution | 全電控自旋場效電晶體 |
|---|---|
| Original language | English |
| Patent number | 9373709 |
| Publication status | Published - 2015 Dec 17 |