ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR

Tse-Ming Chen (Inventor)

Research output: Patent

Abstract

An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.
Original languageEnglish
Patent number9373709
Publication statusPublished - 2015 Dec 17

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field effect transistors
electrons
injection
precession

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title = "ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR",
abstract = "An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.",
author = "Tse-Ming Chen",
year = "2015",
month = "12",
day = "17",
language = "English",
type = "Patent",
note = "9373709",

}

ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR. / Chen, Tse-Ming (Inventor).

Patent No.: 9373709.

Research output: Patent

TY - PAT

T1 - ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR

AU - Chen, Tse-Ming

PY - 2015/12/17

Y1 - 2015/12/17

N2 - An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.

AB - An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.

M3 - Patent

M1 - 9373709

ER -

Chen T-M, inventor. ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR. 9373709. 2015 Dec 17.