ALL-ELECTRIC SPIN FIELD EFFECT TRANSISTOR

Tse-Ming Chen (Inventor)

Research output: Patent

Abstract

An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.
Translated title of the contribution全電控自旋場效電晶體
Original languageEnglish
Patent number9373709
Publication statusPublished - 2015 Dec 17

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