Alleviation of charge trapping and flicker noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering

Sourav De, Wei Xuan Bu, Bo Han Qiu, Chung Jun Su, Yao Jen Lee, Darsen D. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this article we proclaim excellent improvement in the defect densities in hafnium zirconium oxide based ferroelectric film obtained by extending the duration of post-metallization annealing up to 180s. The consequences of extending the annealing duration on the structure and surface morphology was gauged by XRD analysis, HR-TEM and AFM, which showed increase in the grain size, well defined crystallinity, lower defect densities and negligible impact on surface roughness. The electrical characterization revealed reduction in RC leakage along with a significant improvement in flicker noise and random telegraphic noise characteristics, which proves reduction of defect densities when the annealing time is increased.

Original languageEnglish
Title of host publicationVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665419345
DOIs
Publication statusPublished - 2021 Apr 19
Event2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
Duration: 2021 Apr 192021 Apr 22

Publication series

NameVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/TerritoryTaiwan
CityHsinchu
Period21-04-1921-04-22

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Control and Optimization

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