Alleviation of charge trapping and flicker noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering

Sourav De; Wei Xuan Bu; Bo Han Qiu; Chung Jun Su; Yao Jen Lee; Darsen D. Lu

doi:10.1109/VLSI-TSA51926.2021.9440091

Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering

Sourav De, Wei Xuan Bu, Bo Han Qiu, Chung Jun Su, Yao Jen Lee, Darsen D. Lu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

In this article we proclaim excellent improvement in the defect densities in hafnium zirconium oxide based ferroelectric film obtained by extending the duration of post-metallization annealing up to 180s. The consequences of extending the annealing duration on the structure and surface morphology was gauged by XRD analysis, HR-TEM and AFM, which showed increase in the grain size, well defined crystallinity, lower defect densities and negligible impact on surface roughness. The electrical characterization revealed reduction in RC leakage along with a significant improvement in flicker noise and random telegraphic noise characteristics, which proves reduction of defect densities when the annealing time is increased.

Original language	English
Title of host publication	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665419345
DOIs	https://doi.org/10.1109/VLSI-TSA51926.2021.9440091
Publication status	Published - 2021 Apr 19
Event	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan Duration: 2021 Apr 19 → 2021 Apr 22

Publication series

Name	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/Territory	Taiwan
City	Hsinchu
Period	21-04-19 → 21-04-22

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Control and Optimization

Access to Document

10.1109/VLSI-TSA51926.2021.9440091

Cite this

De, S., Bu, W. X., Qiu, B. H., Su, C. J., Lee, Y. J., & Lu, D. D. (2021). Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings Article 9440091 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440091

De, Sourav ; Bu, Wei Xuan ; Qiu, Bo Han et al. / Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering. VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

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title = "Alleviation of charge trapping and flicker noise in HfZrO2-Based Ferroelectric Capacitors by Thermal Engineering",

abstract = "In this article we proclaim excellent improvement in the defect densities in hafnium zirconium oxide based ferroelectric film obtained by extending the duration of post-metallization annealing up to 180s. The consequences of extending the annealing duration on the structure and surface morphology was gauged by XRD analysis, HR-TEM and AFM, which showed increase in the grain size, well defined crystallinity, lower defect densities and negligible impact on surface roughness. The electrical characterization revealed reduction in RC leakage along with a significant improvement in flicker noise and random telegraphic noise characteristics, which proves reduction of defect densities when the annealing time is increased.",

author = "Sourav De and Bu, {Wei Xuan} and Qiu, {Bo Han} and Su, {Chung Jun} and Lee, {Yao Jen} and Lu, {Darsen D.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

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language = "English",

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De, S, Bu, WX, Qiu, BH, Su, CJ, Lee, YJ & Lu, DD 2021, Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering. in VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440091, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, Taiwan, 21-04-19. https://doi.org/10.1109/VLSI-TSA51926.2021.9440091

Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering. / De, Sourav; Bu, Wei Xuan; Qiu, Bo Han et al.
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440091 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - In this article we proclaim excellent improvement in the defect densities in hafnium zirconium oxide based ferroelectric film obtained by extending the duration of post-metallization annealing up to 180s. The consequences of extending the annealing duration on the structure and surface morphology was gauged by XRD analysis, HR-TEM and AFM, which showed increase in the grain size, well defined crystallinity, lower defect densities and negligible impact on surface roughness. The electrical characterization revealed reduction in RC leakage along with a significant improvement in flicker noise and random telegraphic noise characteristics, which proves reduction of defect densities when the annealing time is increased.

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De S, Bu WX, Qiu BH, Su CJ, Lee YJ, Lu DD. Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440091. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440091