A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering