AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

Shiou Ying Cheng, Po Hung Lin, Wei Chou Wang, Jing Yuh Chen, Wen Chau Liu, Wei Lin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.

Original languageEnglish
Pages (from-to)534-535
Number of pages2
JournalElectronics Letters
Volume33
Issue number6
DOIs
Publication statusPublished - 1997 Mar 13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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