AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

Shiou Ying Cheng; Po Hung Lin; Wei Chou Wang; Jing Yuh Chen; Wen Chau Liu; Wei Lin

doi:10.1049/el:19970291

AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

Shiou Ying Cheng, Po Hung Lin, Wei Chou Wang, Jing Yuh Chen, Wen Chau Liu, Wei Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.

Original language	English
Pages (from-to)	534-535
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	6
DOIs	https://doi.org/10.1049/el:19970291
Publication status	Published - 1997 Mar 13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19970291

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@article{2343e47fed7b4c069bb5e784d5efde43,

title = "AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)",

abstract = "A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.",

author = "Cheng, {Shiou Ying} and Lin, {Po Hung} and Wang, {Wei Chou} and Chen, {Jing Yuh} and Liu, {Wen Chau} and Wei Lin",

year = "1997",

month = mar,

day = "13",

doi = "10.1049/el:19970291",

language = "English",

volume = "33",

pages = "534--535",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "6",

}

TY - JOUR

T1 - AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

AU - Cheng, Shiou Ying

AU - Lin, Po Hung

AU - Wang, Wei Chou

AU - Chen, Jing Yuh

AU - Liu, Wen Chau

AU - Lin, Wei

PY - 1997/3/13

Y1 - 1997/3/13

N2 - A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.

AB - A new long-period-superlattice resonant-tunnelling transistor (LPSRTT) with a 20-period i-AlInAs/n-InGaAs superlattice has been fabricated and demonstrated. This device exhibits good transistor performance, e.g. the very small offset voltage. Furthermore, an interesting negative-differential-resistance (NDR) phenomenon resulting from the RT through the superlattice region is obtained at 77 K.

UR - http://www.scopus.com/inward/record.url?scp=0343956906&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343956906&partnerID=8YFLogxK

U2 - 10.1049/el:19970291

DO - 10.1049/el:19970291

M3 - Article

AN - SCOPUS:0343956906

SN - 0013-5194

VL - 33

SP - 534

EP - 535

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

AllnAs/InGaAs long-period-superlattice resonant-tunnelling transistor (LPSRTT)

Abstract

All Science Journal Classification (ASJC) codes

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