Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

X. Z. Liao; J. Zou; D. J. Cockayne; J. Wan; Z. M. Jiang; Z. M. Jiang; G. Jin; Kang L. Wang

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

X. Z. Liao, J. Zou, D. J. Cockayne, J. Wan, Z. M. Jiang, Z. M. Jiang, G. Jin, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575°C were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.

Original language	English
Article number	153306
Pages (from-to)	1533061-1533064
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	15
Publication status	Published - 2002 Apr 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots",

abstract = "Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575°C were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.",

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AU - Liao, X. Z.

AU - Zou, J.

AU - Cockayne, D. J.

AU - Wan, J.

AU - Jiang, Z. M.

AU - Jin, G.

AU - Wang, Kang L.

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575°C were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.

AB - Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575°C were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.

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SN - 1098-0121

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IS - 15

M1 - 153306

ER -

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

Abstract

All Science Journal Classification (ASJC) codes

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