AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry