Al0.22Ga0.78 NGaN HFETs prepared on vicinal-cut sapphire substrates

K. T. Lam; C. L. Yu; P. C. Chang; U. H. Liaw; J. C. Lin; S. J. Chang

doi:10.1149/1.2755769

Al_0.22Ga_0.78 NGaN HFETs prepared on vicinal-cut sapphire substrates

K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, J. C. Lin, S. J. Chang

Research output: Contribution to journal › Article › peer-review

Abstract

AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.

Original language	English
Pages (from-to)	H811-H813
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	9
DOIs	https://doi.org/10.1149/1.2755769
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2755769

Cite this

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title = "Al0.22Ga0.78 NGaN HFETs prepared on vicinal-cut sapphire substrates",

abstract = "AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.",

author = "Lam, {K. T.} and Yu, {C. L.} and Chang, {P. C.} and Liaw, {U. H.} and Lin, {J. C.} and Chang, {S. J.}",

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TY - JOUR

T1 - Al0.22Ga0.78 NGaN HFETs prepared on vicinal-cut sapphire substrates

AU - Lam, K. T.

AU - Yu, C. L.

AU - Chang, P. C.

AU - Liaw, U. H.

AU - Lin, J. C.

AU - Chang, S. J.

PY - 2007

Y1 - 2007

N2 - AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.

AB - AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.

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