Abstract
AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.
Original language | English |
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Pages (from-to) | H811-H813 |
Journal | Journal of the Electrochemical Society |
Volume | 154 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry