Al0.22Ga0.78 NGaN HFETs prepared on vicinal-cut sapphire substrates

K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, J. C. Lin, S. J. Chang

Research output: Contribution to journalArticle

Abstract

AlGaNGaN heterostructure field effect transistors (HFETs) were prepared on vicinal-cut sapphire substrates. Under reverse bias, it was found that we can achieve smaller gate leakage current and smaller source-drain leakage current by using the 1° tilted substrate. These results could be attributed to the better crystal quality and fewer crystal defects by using vicinal-cut sapphire substrates. With 2 μm gate length, the maximum transconductance, Gm,max, was 110 mSmm for the HFETs prepared on vicinal-cut sapphire substrates.

Original languageEnglish
Pages (from-to)H811-H813
JournalJournal of the Electrochemical Society
Volume154
Issue number9
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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