Abstract
A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.
| Original language | English |
|---|---|
| Pages (from-to) | 763-768 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 54 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2010 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
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Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric. / Basu, Sarbani; Singh, Pramod K.; Sze, Po Wen; Wang, Yeong-Her.
In: Solid-State Electronics, Vol. 54, No. 8, 01.08.2010, p. 763-768.Research output: Contribution to journal › Article
TY - JOUR
T1 - Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric
AU - Basu, Sarbani
AU - Singh, Pramod K.
AU - Sze, Po Wen
AU - Wang, Yeong-Her
PY - 2010/8/1
Y1 - 2010/8/1
N2 - A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.
AB - A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.
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U2 - 10.1016/j.sse.2010.03.021
DO - 10.1016/j.sse.2010.03.021
M3 - Article
VL - 54
SP - 763
EP - 768
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 8
ER -