Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

Sarbani Basu, Pramod K. Singh, Po Wen Sze, Yeong-Her Wang

Research output: Contribution to journalArticlepeer-review


A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.

Original languageEnglish
Pages (from-to)763-768
Number of pages6
JournalSolid-State Electronics
Issue number8
Publication statusPublished - 2010 Aug 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry


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