Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

Sarbani Basu, Pramod K. Singh, Po Wen Sze, Yeong-Her Wang

Research output: Contribution to journalArticle

Abstract

A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.

Original languageEnglish
Pages (from-to)763-768
Number of pages6
JournalSolid-State Electronics
Volume54
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

Fingerprint

Gate dielectrics
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
liquid phases
Metals
Liquids
Transconductance
transconductance
Electric breakdown
Threshold voltage
electrical faults
power supplies
Leakage currents
threshold voltage
Temperature
leakage
amplifiers
Microwaves
insulators

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Basu, Sarbani ; Singh, Pramod K. ; Sze, Po Wen ; Wang, Yeong-Her. / Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric. In: Solid-State Electronics. 2010 ; Vol. 54, No. 8. pp. 763-768.
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Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric. / Basu, Sarbani; Singh, Pramod K.; Sze, Po Wen; Wang, Yeong-Her.

In: Solid-State Electronics, Vol. 54, No. 8, 01.08.2010, p. 763-768.

Research output: Contribution to journalArticle

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