Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

Sarbani Basu; Pramod K. Singh; Po Wen Sze; Yeong-Her Wang

doi:10.1016/j.sse.2010.03.021

Al_0.2Ga_0.8As/In_0.15Ga_0.85As MOSPHEMT with low temperature LPD-deposited Al₂O₃ as gate dielectric

Sarbani Basu, Pramod K. Singh, Po Wen Sze, Yeong-Her Wang

Research output: Contribution to journal › Article › peer-review

Abstract

A high breakdown voltage and a low gate leakage current Al _0.2Ga_0.8As/In_0.15Ga_0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al ₂O₃ layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (g_m) value at gate bias (V_GS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm² devices exhibited a peak g _m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (I_ds) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al_0.2Ga_0.8As/In_0.15Ga _0.85As MOSPHEMTs have potential for microwave power device applications.

Original language	English
Pages (from-to)	763-768
Number of pages	6
Journal	Solid-State Electronics
Volume	54
Issue number	8
DOIs	https://doi.org/10.1016/j.sse.2010.03.021
Publication status	Published - 2010 Aug 1

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1016/j.sse.2010.03.021

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@article{e8a502b81f104a938384d5598bf07023,

title = "Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric",

abstract = "A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.",

author = "Sarbani Basu and Singh, {Pramod K.} and Sze, {Po Wen} and Yeong-Her Wang",

year = "2010",

month = aug,

day = "1",

doi = "10.1016/j.sse.2010.03.021",

language = "English",

volume = "54",

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journal = "Solid-State Electronics",

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T1 - Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

AU - Basu, Sarbani

AU - Singh, Pramod K.

AU - Sze, Po Wen

AU - Wang, Yeong-Her

PY - 2010/8/1

Y1 - 2010/8/1

N2 - A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.

AB - A high breakdown voltage and a low gate leakage current Al 0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al 2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (gm) value at gate bias (VGS) of 0 V for single power supply amplifier application. The fabricated 2 × 100 μm2 devices exhibited a peak g m of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (Ids) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.8As/In0.15Ga 0.85As MOSPHEMTs have potential for microwave power device applications.

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U2 - 10.1016/j.sse.2010.03.021

DO - 10.1016/j.sse.2010.03.021

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VL - 54

SP - 763

EP - 768

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

ER -

Al_0.2Ga_0.8As/In_0.15Ga_0.85As MOSPHEMT with low temperature LPD-deposited Al₂O₃ as gate dielectric

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