TY - JOUR
T1 - Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask
AU - Lee, Ming Lun
AU - Chen, Ching Hua
AU - Sheu, Jinn Kong
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan , for the financial support under contract Nos. MOST-107-2221-E-006-187-MY3 , MOST-107-2112-M-006-023-MY3 , MOST-107-2221-E-218-012-MY3 , and MOST-106-2221-E-006-164 .
Publisher Copyright:
© 2020
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/10
Y1 - 2020/10
N2 - This study demonstrates an Al0.3Ga0.7N/GaN heterostructure field-effect transistor (HFET), which features a regrown p-GaN gate layer formed by selective-area regrowth using Si ion implantation at the drain and source area as a mask layer. The surface of the Si-implanted area has distorted lattices compared with the implantation-free area. As such, selective-area growth (SAG) can be achieved when the regrowth process is performed using the Al0.3Ga0.7N/GaN heterostructure with selective-area Si implantation as growth templates. The Ti/Al/Ti/Au metal scheme is then deposited on the surface of the Si-implanted Al0.3Ga0.7N layer after the regrowth of the p-GaN gate layer. The Ti/Al/Ti/Au contacts without subsequent thermal alloying on the Si-implanted Al0.3Ga0.7N layers exhibit a typical specific contact resistance of approximately 4.5 × 10−4 Ω cm2. However, the Ti/Al/Ti/Au contacts deposited on the undoped Al0.3Ga0.7N layer exhibit Schottky I–V characteristics even the samples are alloyed at high temperatures. According to the results described above, an Al0.3Ga0.7N/GaN HFET with a p-GaN gate layer formed by SAG on the Si-implanted Al0.3Ga0.7N layer is also demonstrated in this study.
AB - This study demonstrates an Al0.3Ga0.7N/GaN heterostructure field-effect transistor (HFET), which features a regrown p-GaN gate layer formed by selective-area regrowth using Si ion implantation at the drain and source area as a mask layer. The surface of the Si-implanted area has distorted lattices compared with the implantation-free area. As such, selective-area growth (SAG) can be achieved when the regrowth process is performed using the Al0.3Ga0.7N/GaN heterostructure with selective-area Si implantation as growth templates. The Ti/Al/Ti/Au metal scheme is then deposited on the surface of the Si-implanted Al0.3Ga0.7N layer after the regrowth of the p-GaN gate layer. The Ti/Al/Ti/Au contacts without subsequent thermal alloying on the Si-implanted Al0.3Ga0.7N layers exhibit a typical specific contact resistance of approximately 4.5 × 10−4 Ω cm2. However, the Ti/Al/Ti/Au contacts deposited on the undoped Al0.3Ga0.7N layer exhibit Schottky I–V characteristics even the samples are alloyed at high temperatures. According to the results described above, an Al0.3Ga0.7N/GaN HFET with a p-GaN gate layer formed by SAG on the Si-implanted Al0.3Ga0.7N layer is also demonstrated in this study.
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U2 - 10.1016/j.physe.2020.114367
DO - 10.1016/j.physe.2020.114367
M3 - Article
AN - SCOPUS:85087800862
VL - 124
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
M1 - 114367
ER -