Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

Ching Sung Lee, Yan Ting Shen, Wei Chou Hsu, Yi Ping Huang, Cheng Yang You

Research output: Contribution to journalArticle

Abstract

Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.

Original languageEnglish
Article number8917644
Pages (from-to)9-14
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume8
DOIs
Publication statusPublished - 2020 Jan 1

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Semiconductors
High electron mobility transistors
Electric breakdown
Oxides
Metals
Spray pyrolysis
Gate dielectrics
Transconductance
Ultrasonics
Current density
Equipment and Supplies
Wavelength
Substrates
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{e09100a8eab84b84b6f7dd89db5fb322,
title = "Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel",
abstract = "Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.",
author = "Lee, {Ching Sung} and Shen, {Yan Ting} and Hsu, {Wei Chou} and Huang, {Yi Ping} and You, {Cheng Yang}",
year = "2020",
month = "1",
day = "1",
doi = "10.1109/JEDS.2019.2956497",
language = "English",
volume = "8",
pages = "9--14",
journal = "IEEE Journal of the Electron Devices Society",
issn = "2168-6734",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel. / Lee, Ching Sung; Shen, Yan Ting; Hsu, Wei Chou; Huang, Yi Ping; You, Cheng Yang.

In: IEEE Journal of the Electron Devices Society, Vol. 8, 8917644, 01.01.2020, p. 9-14.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel

AU - Lee, Ching Sung

AU - Shen, Yan Ting

AU - Hsu, Wei Chou

AU - Huang, Yi Ping

AU - You, Cheng Yang

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.

AB - Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.

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