TY - JOUR
T1 - Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with Symmetrically-Graded Widegap Channel
AU - Lee, Ching Sung
AU - Shen, Yan Ting
AU - Hsu, Wei Chou
AU - Huang, Yi Ping
AU - You, Cheng Yang
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST 108-2221-E-035-038-MY3.
Publisher Copyright:
© 2013 IEEE.
PY - 2020
Y1 - 2020
N2 - Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.
AB - Novel Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1-xN channel (x =,,0.75 to 0.25 to 0.75 ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- mu text{m} gate length ( L{G} ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( I{DS, max} ) of 299.3 A/mm at {V{DS}} = 20 V, I{DS} density at V{GS} = 0 V ( I{DSS0} ) of 153.9 mA/mm, on/off-current ratio ( I{on} / I{off} ) of 1.4 times 10{7} , extrinsic transconductance ( g{m, max} ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( BV{GD} ) of -379 V, and three-terminal on-state drain-source breakdown voltage ( BV{DS} ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength {boldsymbol{lambda }} = 250 (300) nm are also achieved.
UR - http://www.scopus.com/inward/record.url?scp=85077809221&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85077809221&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2019.2956497
DO - 10.1109/JEDS.2019.2956497
M3 - Article
AN - SCOPUS:85077809221
SN - 2168-6734
VL - 8
SP - 9
EP - 14
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
M1 - 8917644
ER -