Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Ching Sung Lee, Xue Cheng Yao, Yi Ping Huang, Wei Chou Hsu

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1 Citation (Scopus)


Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

Original languageEnglish
Article number8470934
Pages (from-to)1142-1146
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Publication statusPublished - 2018

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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