Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Ching Sung Lee, Xue Cheng Yao, Yi Ping Huang, Wei-Chou Hsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

Original languageEnglish
Article number8470934
Pages (from-to)1142-1146
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
Electric breakdown
Composite materials
Spray pyrolysis
Transconductance
Sputtering
Current density
Ultrasonics
Ions
Networks (circuits)
Oxide semiconductors
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{2e534a525cde434099670e0017c4c06b,
title = "Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides",
abstract = "Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9{\%} at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.",
author = "Lee, {Ching Sung} and Yao, {Xue Cheng} and Huang, {Yi Ping} and Wei-Chou Hsu",
year = "2018",
month = "1",
day = "1",
doi = "10.1109/JEDS.2018.2870844",
language = "English",
volume = "6",
pages = "1142--1146",
journal = "IEEE Journal of the Electron Devices Society",
issn = "2168-6734",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides. / Lee, Ching Sung; Yao, Xue Cheng; Huang, Yi Ping; Hsu, Wei-Chou.

In: IEEE Journal of the Electron Devices Society, Vol. 6, 8470934, 01.01.2018, p. 1142-1146.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

AU - Lee, Ching Sung

AU - Yao, Xue Cheng

AU - Huang, Yi Ping

AU - Hsu, Wei-Chou

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

AB - Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al2O3 dielectric and a 1-μm long field-plate on the composite Al2O3/TiO2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (gm,max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS,max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS= -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO2-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=85054549003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054549003&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2018.2870844

DO - 10.1109/JEDS.2018.2870844

M3 - Article

VL - 6

SP - 1142

EP - 1146

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

M1 - 8470934

ER -