TY - JOUR
T1 - Al2O3-dielectric In0.18Al0.82N/AlN/GaN/Si metal-oxide-semiconductor heterostructure field-effect transistors with backside substrate metal-trench structure
AU - Lee, Ching Sung
AU - Hsu, Wei Chou
AU - Liu, Han Yin
AU - Chen, Yu Chang
N1 - Funding Information:
1 Department of Electronic Engineering, Feng Chia University, Taichung 40857, Taiwan 2 Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan CORRESPONDING AUTHOR: C.-S. LEE (e-mail: [email protected]) This work was supported by the Ministry of Science and Technology, under Contract MOST 105-2221-E-035-076-MY3.
Funding Information:
This work was supported by the Ministry of Science and Technology, under Contract MOST 105-2221-E-035-076-MY3.
Publisher Copyright:
© 2017 IEEE.
PY - 2018
Y1 - 2018
N2 - This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain.source current density (IDS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 108 (7.4 × 104), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Ga) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.
AB - This paper investigates novel Al2O3-dielectric In0.18Al0.82N/AlN/GaN metal-oxidesemiconductor heterostructure field-effect transistors (MOS-HFETs) with backside metal-trench structure grown by using a non-vacuum ultrasonic spray pyrolysis deposition technique. 3-μm deep metal trenches coated with 150-nm thick Ni were formed on the backside of the Si substrate to improve the heat dissipation efficiency. The present In0.18Al0.82N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain.source current density (IDS,max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 108 (7.4 × 104), subthreshold swing of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Ga) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are achieved.
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U2 - 10.1109/JEDS.2017.2769115
DO - 10.1109/JEDS.2017.2769115
M3 - Article
AN - SCOPUS:85034041613
SN - 2168-6734
VL - 6
SP - 68
EP - 73
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
IS - 1
ER -