Al2O3 passivation layer for InGaN/GaN LED deposited by ultrasonic spray pyrolysis

Han Yin Liu; Wei Chou Hsu; Bo Yi Chou; Yi Hsuan Wang; Wen Ching Sun; Sung Yen Wei; Sheng Min Yu

doi:10.1109/LPT.2014.2319309

Al₂O₃ passivation layer for InGaN/GaN LED deposited by ultrasonic spray pyrolysis

Han Yin Liu, Wei Chou Hsu, Bo Yi Chou, Yi Hsuan Wang, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al ₂O₃ as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al₂O₃ is analyzed by X-ray photoelectron spectroscopy. The refractive index and transmittance of USP-grown Al₂O₃ are investigated. The thickness of Al ₂O₃ is determined to be 70 nm, which is close to the optimum from antireflection theorem calculation for the wavelength of 455 nm. The coverage quality and thickness are confirmed by transmission electron microscopy. The light output power (LOP) of USP-grown-Al₂O ₃-passivated InGaN/GaN LED is improved from 321 mW to 347 mW compared with an LED without passivation. The forward voltage (V_F) and series resistance (R_s) are not subject to significant variations but the shunt resistance (R_SH) is increased after Al₂O₃ passivation. LED chips with Al₂O₃ and SiO₂ passivation are packaged as LED lamps. Devices passivated by USP-grown Al ₂O₃ show slightly better LOP performance than those passivated by plasma-enhanced chemical vapor deposition-grown SiO₂.

Original language	English
Article number	6805178
Pages (from-to)	1243-1246
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	26
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2014.2319309
Publication status	Published - 2014 Jun 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2014.2319309

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title = "Al2O3 passivation layer for InGaN/GaN LED deposited by ultrasonic spray pyrolysis",

abstract = "This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al 2O3 as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al2O3 is analyzed by X-ray photoelectron spectroscopy. The refractive index and transmittance of USP-grown Al2O3 are investigated. The thickness of Al 2O3 is determined to be 70 nm, which is close to the optimum from antireflection theorem calculation for the wavelength of 455 nm. The coverage quality and thickness are confirmed by transmission electron microscopy. The light output power (LOP) of USP-grown-Al2O 3-passivated InGaN/GaN LED is improved from 321 mW to 347 mW compared with an LED without passivation. The forward voltage (VF) and series resistance (Rs) are not subject to significant variations but the shunt resistance (RSH) is increased after Al2O3 passivation. LED chips with Al2O3 and SiO2 passivation are packaged as LED lamps. Devices passivated by USP-grown Al 2O3 show slightly better LOP performance than those passivated by plasma-enhanced chemical vapor deposition-grown SiO2.",

author = "Liu, {Han Yin} and Hsu, {Wei Chou} and Chou, {Bo Yi} and Wang, {Yi Hsuan} and Sun, {Wen Ching} and Wei, {Sung Yen} and Yu, {Sheng Min}",

year = "2014",

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AU - Liu, Han Yin

AU - Hsu, Wei Chou

AU - Chou, Bo Yi

AU - Wang, Yi Hsuan

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

PY - 2014/6/15

Y1 - 2014/6/15

N2 - This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al 2O3 as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al2O3 is analyzed by X-ray photoelectron spectroscopy. The refractive index and transmittance of USP-grown Al2O3 are investigated. The thickness of Al 2O3 is determined to be 70 nm, which is close to the optimum from antireflection theorem calculation for the wavelength of 455 nm. The coverage quality and thickness are confirmed by transmission electron microscopy. The light output power (LOP) of USP-grown-Al2O 3-passivated InGaN/GaN LED is improved from 321 mW to 347 mW compared with an LED without passivation. The forward voltage (VF) and series resistance (Rs) are not subject to significant variations but the shunt resistance (RSH) is increased after Al2O3 passivation. LED chips with Al2O3 and SiO2 passivation are packaged as LED lamps. Devices passivated by USP-grown Al 2O3 show slightly better LOP performance than those passivated by plasma-enhanced chemical vapor deposition-grown SiO2.

AB - This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al 2O3 as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al2O3 is analyzed by X-ray photoelectron spectroscopy. The refractive index and transmittance of USP-grown Al2O3 are investigated. The thickness of Al 2O3 is determined to be 70 nm, which is close to the optimum from antireflection theorem calculation for the wavelength of 455 nm. The coverage quality and thickness are confirmed by transmission electron microscopy. The light output power (LOP) of USP-grown-Al2O 3-passivated InGaN/GaN LED is improved from 321 mW to 347 mW compared with an LED without passivation. The forward voltage (VF) and series resistance (Rs) are not subject to significant variations but the shunt resistance (RSH) is increased after Al2O3 passivation. LED chips with Al2O3 and SiO2 passivation are packaged as LED lamps. Devices passivated by USP-grown Al 2O3 show slightly better LOP performance than those passivated by plasma-enhanced chemical vapor deposition-grown SiO2.

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Al₂O₃ passivation layer for InGaN/GaN LED deposited by ultrasonic spray pyrolysis

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