TY - JOUR
T1 - Alternately Controlled Optical Pixel Sensor System Using Amorphous Silicon Thin-Film Transistors
AU - Lin, Chih Lung
AU - Wu, Chia En
AU - Lee, Chia Lun
AU - Chen, Fu Hsing
AU - Lin, Yu Sheng
AU - Wu, Wan Lin
AU - Yu, Jian Shen
N1 - Funding Information:
Manuscript received June 21, 2018; revised August 29, 2018 and September 29, 2018; accepted October 25, 2018. Date of publication November 15, 2018; date of current version April 30, 2019. This work was supported in part by the Ministry of Science and Technology of Taiwan under Project MOST 107-2218-E-006-003 and Project MOST 104-2221-E-006-189-MY3 and in part by AU Optronics Corporation. (Corresponding author: Chih-Lung Lin.) C.-L. Lin is with the Department of Electrical Engineering and the Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701-01, Taiwan (e-mail:,[email protected]).
Publisher Copyright:
© 1982-2012 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - This paper presents an optical pixel sensor system that uses hydrogenated amorphous silicon (a-Si:H) photo thin-film transistors (TFTs) for innovating the user interface of displays with optical input functions. The proposed optical pixel sensor applies photo TFTs that are combined with one primary color filter (red, green, or blue) to determine the input signal to the optical sensor. Other photo TFTs covered with filters of other colors are utilized to provide compensating photocurrents for achieving a robust optical input function with a high signal-to-noise ratio under intense ambient white light. To improve the lifetime of the sensor and the degradation of photo TFTs under constant drain-to-source voltage (V DS ) bias stress, an alternately controlled sensing structure is proposed to reduce the effective stress time of the photo TFTs. The optical characteristics and the degradation of a-Si:H photo TFTs under V DS stress with different duty ratios are investigated to verify the effect of reduced stress time on photo TFTs. Measurements further reveal that the proposed optical sensor achieves a significant initial difference in output voltages under high-intensity ambient white light of 13 230 lx, and that the difference remains high after 408 h of long-term operation at 70 °C, demonstrating the feasibility of the alternately controlled sensing structure and the long-term reliability of the sensor.
AB - This paper presents an optical pixel sensor system that uses hydrogenated amorphous silicon (a-Si:H) photo thin-film transistors (TFTs) for innovating the user interface of displays with optical input functions. The proposed optical pixel sensor applies photo TFTs that are combined with one primary color filter (red, green, or blue) to determine the input signal to the optical sensor. Other photo TFTs covered with filters of other colors are utilized to provide compensating photocurrents for achieving a robust optical input function with a high signal-to-noise ratio under intense ambient white light. To improve the lifetime of the sensor and the degradation of photo TFTs under constant drain-to-source voltage (V DS ) bias stress, an alternately controlled sensing structure is proposed to reduce the effective stress time of the photo TFTs. The optical characteristics and the degradation of a-Si:H photo TFTs under V DS stress with different duty ratios are investigated to verify the effect of reduced stress time on photo TFTs. Measurements further reveal that the proposed optical sensor achieves a significant initial difference in output voltages under high-intensity ambient white light of 13 230 lx, and that the difference remains high after 408 h of long-term operation at 70 °C, demonstrating the feasibility of the alternately controlled sensing structure and the long-term reliability of the sensor.
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U2 - 10.1109/TIE.2018.2880718
DO - 10.1109/TIE.2018.2880718
M3 - Article
AN - SCOPUS:85056719521
SN - 0278-0046
VL - 66
SP - 7366
EP - 7375
JO - IEEE Transactions on Industrial Electronics
JF - IEEE Transactions on Industrial Electronics
IS - 9
M1 - 8536868
ER -