Alternating current bias-assisted photoenhanced oxidation of n-GaN in dionized water

T. H. Hsueh, W. C. Lai, C. Y. Yeh, J. K. Sheu, L. C. Peng, K. H. Chang, S. E. Wu, C. P. Liu, Baptiste Gault, Simon P. Ringer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Patterned oxidation of n-GaN in water at room temperature is achieved by using an imprint technique and an alternating current (ac) bias-assisted photoelectrochemical process. Mold is fabricated by a double-side polished sapphire coated with indium tin oxide thin film to be an electrode for electric conduction and allow the high transparency for ultraviolet light. The growth rate of gallium oxide-based material of around 12 nm/min could be achieved when an ac bias of 3 V with a duty cycle of 90% was applied to the system. The film is determined by high-resolution transmission electron microscopy and selected area electron diffraction pattern.

Original languageEnglish
Title of host publicationProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages1-3
Number of pages3
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia
Duration: 2008 Jul 282008 Aug 1

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Country/TerritoryAustralia
CitySydney, NSW
Period08-07-2808-08-01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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