Aluminum electrode modulated bipolar resistive switching of Al/fuel-assisted NiO x/ITO memory devices modeled with a dual-oxygen-reservoir structure

Kun Keng Chiang, Jen-Sue Chen, Jih-Jen Wu

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

Bipolar resistive switching in Al/fuel-assisted NiO x (40 nm)/ITO devices is demonstrated in this work. XPS analysis reveals the simultaneous presence of metallic Ni, Ni 2O 3, and NiO components in the fuel-assisted NiO x. The concentration, as well as spreading of the metallic Ni and accompanying oxygen vacancies, are related to the Al/NiO x interfacial reaction, which is enhanced by the increasing thickness of the Al top electrode. Correspondingly, the preswitching-on voltage decreases while the preswitching-off voltage increases with increasing thickness (from 15 to 60 nm) of Al. However, in regular switching operation, set and reset voltages are considerably lowered for devices with an increased thickness of the Al top electrode. The bipolar resistive switching behaviors of Al/fuel-assisted NiO x/ITO devices are therefore discussed based on the formation of conductive paths and their correlation with the Al-electrode modulated composition in the fuel-assisted NiO x. The Al/NiO x interfacial reaction region pairs with ITO to form a dual-oxygen-reservoir structure. Mechanisms of construction/destruction of conducting paths originating from the electrochemical redox reactions at the interface between NiO x, and the dual oxygen reservoirs will also be explicated.

Original languageEnglish
Pages (from-to)4237-4245
Number of pages9
JournalACS Applied Materials and Interfaces
Volume4
Issue number8
DOIs
Publication statusPublished - 2012 Aug 22

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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