Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Hung Pin Shiao, Wei Lin, Jian Guan Chen, Yuan Kuag Tu, Ching Ting Lee

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.

Original languageEnglish
Pages (from-to)121-122
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 1994 Dec 1
EventProceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
Duration: 1994 Sep 191994 Sep 23

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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