Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Hung Pin Shiao; Wei Lin; Jian Guan Chen; Yuan Kuag Tu; Ching Ting Lee

Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Hung Pin Shiao, Wei Lin, Jian Guan Chen, Yuan Kuag Tu, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm^-1.

Original language	English
Pages (from-to)	121-122
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
Publication status	Published - 1994
Event	Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: 1994 Sept 19 → 1994 Sept 23

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

@article{959000fb8b0b4d3998ad954414c1c8de,

title = "Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers",

abstract = "Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.",

author = "Shiao, {Hung Pin} and Wei Lin and Chen, {Jian Guan} and Tu, {Yuan Kuag} and Lee, {Ching Ting}",

year = "1994",

language = "English",

pages = "121--122",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 14th International Semiconductor Laser Conference ; Conference date: 19-09-1994 Through 23-09-1994",

}

TY - JOUR

T1 - Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

AU - Shiao, Hung Pin

AU - Lin, Wei

AU - Chen, Jian Guan

AU - Tu, Yuan Kuag

AU - Lee, Ching Ting

PY - 1994

Y1 - 1994

N2 - Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.

AB - Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87% and internal waveguide loss of 6.33 cm-1.

UR - http://www.scopus.com/inward/record.url?scp=0028714928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028714928&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028714928

SN - 0899-9406

SP - 121

EP - 122

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - Proceedings of the 1994 14th International Semiconductor Laser Conference

Y2 - 19 September 1994 through 23 September 1994

ER -

Aluminum-free InGaAs/GaAs/InGaP strained-quantum-well lasers with InGaAsP transition layers

Abstract

All Science Journal Classification (ASJC) codes

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