Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors

Research output: Contribution to journalArticle

Abstract

Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.

LanguageEnglish
Pages210-216
Number of pages7
JournalJournal of Alloys and Compounds
Volume773
DOIs
Publication statusPublished - 2019 Jan 30

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Nanospheres
Photodetectors
Aluminum
Metals
Semiconductor materials
Bias voltage
Surface plasmon resonance
Alloying
Lattice constants

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{eef3135306094c429495ffe1f65480a3,
title = "Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors",
abstract = "Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.",
author = "Hsin-Ying Lee and Lin, {Chi Wen} and Ching-Ting Lee",
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Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors. / Lee, Hsin-Ying; Lin, Chi Wen; Lee, Ching-Ting.

In: Journal of Alloys and Compounds, Vol. 773, 30.01.2019, p. 210-216.

Research output: Contribution to journalArticle

TY - JOUR

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N2 - Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.

AB - Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.

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