Abstract
Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.
| Original language | English |
|---|---|
| Pages (from-to) | 210-216 |
| Number of pages | 7 |
| Journal | Journal of Alloys and Compounds |
| Volume | 773 |
| DOIs | |
| Publication status | Published - 2019 Jan 30 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
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Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors. / Lee, Hsin-Ying; Lin, Chi Wen; Lee, Ching-Ting.
In: Journal of Alloys and Compounds, Vol. 773, 30.01.2019, p. 210-216.Research output: Contribution to journal › Article
TY - JOUR
T1 - Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors
AU - Lee, Hsin-Ying
AU - Lin, Chi Wen
AU - Lee, Ching-Ting
PY - 2019/1/30
Y1 - 2019/1/30
N2 - Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.
AB - Because MgO and NiO materials have the same rock-salt cubic structure and similar lattice constants, the MgNiO absorption layers of metal–semiconductor–metal ultraviolet photodetectors (MSM-UVPDs) were deposited by alloying MgO and NiO. To improve the properties of the MgNiO films, the films were annealed at various temperatures. The grain size of 18.5 nm for the as-deposited MgNiO films was improved to 23.4 nm and 24.8 nm for the MgNiO films annealed at 500 °C and 600 °C for 60 min, respectively. For the film-structured MSM-UVPDs with 500 °C-annealed MgNiO films operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 1.78 × 10−2 A/W, 3.74 × 10−12 A, 2.10 × 10−10 W, and 1.50 × 109 cmHz0.5W−1, respectively. Aluminum (Al) nanospheres were stacked on the film-structured MgNiO MSM-UVPDs. The performance of the resulting Al-nanosphere-stacked MgNiO MSM-UVPDs was improved by increasing the density of the Al nanospheres. With an Al nanosphere density of approximately 2.0 × 107/mm2, when the Al-nanosphere-stacked MgNiO MSM-UVPDs operated at a bias voltage of 5 V, the photoresponsivity, average noise current, noise equivalent power, and specific detectivity were 2.00 × 10−1 A/W, 7.71 × 10−12 A, 3.88 × 10−11 W, and 8.16 × 109 cmHz0.5W−1, respectively. Despite the noise induced by the Al nanospheres, the performance of the Al-nanosphere-stacked MgNiO MSM-UVPDs was better than that of the film-structured MgNiO MSM-UVPDs. The improved detective performance was attributed to the increase in absorbance induced by the surface plasmon resonance and the optical scattering effect of the stacked Al nanospheres.
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U2 - 10.1016/j.jallcom.2018.09.256
DO - 10.1016/j.jallcom.2018.09.256
M3 - Article
VL - 773
SP - 210
EP - 216
JO - Journal of Alloys and Compounds
T2 - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
ER -