Aluminum nitride films deposited under various sputtering parameters on molybdenum electrodes

Cheng Liang Huang, Kok Wan Tay, Long Wu

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this study, highly c-axis-oriented fine polycrystalline aluminum nitride (AlN) films are deposited on molybdenum electrodes using the reactive RF magnetron sputtering method. Molybdenum is adopted as the electrode material rather than the conventional choice of Pt/Ti, Au/Cr or Al because it has low resistivity, large acoustic velocity, and provides a good adhesion between the thin AlN film and the low-stress Si3N4 membrane. The influences of the RF power and nitrogen flow rate ratio on the crystalline orientation and surface morphologies of the deposited AlN films are thoroughly investigated. It was found that the AlN films prepared using the RF power of 400 W and an elevated N2 flow rate ratio of 75% exhibit a greater tendency towards the preferred c-axis-orientation and exhibit smoother morphologies. Furthermore, thicker AlN films and the use of a higher RF power (400 W) in the deposition process tend to promote a narrower full width at half maximum. The experimental results demonstrate that the fabricated FBAR devices, its piezoelectric-active area (24774 μm2) was polygonal shape with 5 sides of 120 μm, the thickness of low-stress Si3N4, AlN film, Mo (bottom) and Al (top) electrodes was consisted of 0.2 μm., 2.25 μm, 0.1 μm and 0.18 μm, respectively. The effective electromechanical coupling coefficient (k2eff) and the quality factor (Qfx) were about 1.5% and 312, respectively.

Original languageEnglish
Pages (from-to)219-225
Number of pages7
JournalSolid-State Electronics
Volume49
Issue number2
DOIs
Publication statusPublished - 2005 Feb 1

Fingerprint

Aluminum nitride
Molybdenum
aluminum nitrides
molybdenum
Sputtering
sputtering
Electrodes
electrodes
flow velocity
Flow rate
Piezoelectric devices
Electromechanical coupling
Acoustic wave velocity
electrode materials
coupling coefficients
Full width at half maximum
acoustic velocity
Crystal orientation
Magnetron sputtering
Surface morphology

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "In this study, highly c-axis-oriented fine polycrystalline aluminum nitride (AlN) films are deposited on molybdenum electrodes using the reactive RF magnetron sputtering method. Molybdenum is adopted as the electrode material rather than the conventional choice of Pt/Ti, Au/Cr or Al because it has low resistivity, large acoustic velocity, and provides a good adhesion between the thin AlN film and the low-stress Si3N4 membrane. The influences of the RF power and nitrogen flow rate ratio on the crystalline orientation and surface morphologies of the deposited AlN films are thoroughly investigated. It was found that the AlN films prepared using the RF power of 400 W and an elevated N2 flow rate ratio of 75{\%} exhibit a greater tendency towards the preferred c-axis-orientation and exhibit smoother morphologies. Furthermore, thicker AlN films and the use of a higher RF power (400 W) in the deposition process tend to promote a narrower full width at half maximum. The experimental results demonstrate that the fabricated FBAR devices, its piezoelectric-active area (24774 μm2) was polygonal shape with 5 sides of 120 μm, the thickness of low-stress Si3N4, AlN film, Mo (bottom) and Al (top) electrodes was consisted of 0.2 μm., 2.25 μm, 0.1 μm and 0.18 μm, respectively. The effective electromechanical coupling coefficient (k2eff) and the quality factor (Qfx) were about 1.5{\%} and 312, respectively.",
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Aluminum nitride films deposited under various sputtering parameters on molybdenum electrodes. / Huang, Cheng Liang; Tay, Kok Wan; Wu, Long.

In: Solid-State Electronics, Vol. 49, No. 2, 01.02.2005, p. 219-225.

Research output: Contribution to journalArticle

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AB - In this study, highly c-axis-oriented fine polycrystalline aluminum nitride (AlN) films are deposited on molybdenum electrodes using the reactive RF magnetron sputtering method. Molybdenum is adopted as the electrode material rather than the conventional choice of Pt/Ti, Au/Cr or Al because it has low resistivity, large acoustic velocity, and provides a good adhesion between the thin AlN film and the low-stress Si3N4 membrane. The influences of the RF power and nitrogen flow rate ratio on the crystalline orientation and surface morphologies of the deposited AlN films are thoroughly investigated. It was found that the AlN films prepared using the RF power of 400 W and an elevated N2 flow rate ratio of 75% exhibit a greater tendency towards the preferred c-axis-orientation and exhibit smoother morphologies. Furthermore, thicker AlN films and the use of a higher RF power (400 W) in the deposition process tend to promote a narrower full width at half maximum. The experimental results demonstrate that the fabricated FBAR devices, its piezoelectric-active area (24774 μm2) was polygonal shape with 5 sides of 120 μm, the thickness of low-stress Si3N4, AlN film, Mo (bottom) and Al (top) electrodes was consisted of 0.2 μm., 2.25 μm, 0.1 μm and 0.18 μm, respectively. The effective electromechanical coupling coefficient (k2eff) and the quality factor (Qfx) were about 1.5% and 312, respectively.

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