Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification

Yu Chang Li; Yu Ju Lin; Chia Yu Wei; Yeong-Her Wang

doi:10.1016/j.sse.2012.02.011

Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification

Yu Chang Li, Yu Ju Lin, Chia Yu Wei, Yeong-Her Wang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The ambipolar characteristics of polyaniline-poly(styrene sulfonic acid) (PANI-PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI-PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI-PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36 cm²/V s while electron mobility is at 1.19 cm²/V s.

Original language	English
Pages (from-to)	56-59
Number of pages	4
Journal	Solid-State Electronics
Volume	79
DOIs	https://doi.org/10.1016/j.sse.2012.02.011
Publication status	Published - 2013 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2012.02.011

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title = "Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification",

abstract = "The ambipolar characteristics of polyaniline-poly(styrene sulfonic acid) (PANI-PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI-PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI-PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36 cm2/V s while electron mobility is at 1.19 cm2/V s.",

author = "Li, {Yu Chang} and Lin, {Yu Ju} and Wei, {Chia Yu} and Yeong-Her Wang",

year = "2013",

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T1 - Ambipolar characteristics of the polyaniline-poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification

AU - Li, Yu Chang

AU - Lin, Yu Ju

AU - Wei, Chia Yu

AU - Wang, Yeong-Her

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The ambipolar characteristics of polyaniline-poly(styrene sulfonic acid) (PANI-PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI-PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI-PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36 cm2/V s while electron mobility is at 1.19 cm2/V s.

AB - The ambipolar characteristics of polyaniline-poly(styrene sulfonic acid) (PANI-PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI-PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI-PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36 cm2/V s while electron mobility is at 1.19 cm2/V s.

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