Ambipolar conduction behavior on high performance schottky barrier source/drain gate-all-around si nanowire nonvolatile SONOS memory

Ching Yuan Ho, Yaw Jen Chang, C. C. Lee, W. Chang, H. W. Wang, Y. Kanga

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A Novel structure and high performance of the Schottky barrier source/drain gate-all-around (GAA) poly-Si nanowire (SiNW) nonvolatile silicon-oxide- nitride-oxide-silicon (SONOS) memory cell is reported with transistor characteristics, efficient programming/ erasing, and reliability. The non-uniform thermal stress distribution on SiNW channel due to thermal insulation from the substrate by the buried oxide layer could affect carrier transport behavior. Under a high lateral electric field, the impact ionization is found since a large lateral field enhances carrier velocity. As gate voltage increases, the difference of the drain current between higher and room temperatures can be reduced because a high gate field lowers the Schottky barrier height of source/drain to ensure a strong hot-carriers generation. In particular, the ambipolar conduction of the Schottky barrier source/drain devices promotes the amount of hot-electron injecting programming by positive gate voltage, whereas the Schottky barrier enhances the generation of hot-holes at negative gate voltage to carry out erasure. The proposed Schottky barrier SONOS memory device provides low-voltage and high efficiency programming/erasing without apparent degradation of data retention and 10-K cycling endurance.

Original languageEnglish
Pages (from-to)P241-P245
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number5
DOIs
Publication statusPublished - 2012 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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