Ammonia gas sensing performance of an indium tin oxide (ITO) based device with an underlying au-nanodot layer

  • Chi Shiang Hsu
  • , Huey Ing Chen
  • , Cheng Wei Lin
  • , Tai You Chen
  • , Chien Chang Huang
  • , Po Cheng Chou
  • , Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The temperature-dependent ammonia gas sensing performance of an interesting indium tin oxide (ITO) based device with an underlying Au-nanodot layer (ITO-Au) is studied and demonstrated. The studied ITO-Au device exhibits good ammonia gas sensing performance and widespread ammonia gas concentration regime. The optimal operation temperature of the studied ITO-Au device is 150?C. The studied ITO-Au device exhibits the benefit of improved sensing performance and extremely low ammonia gas concentration detecting ability. For example, under introduced 1000 ppm and 175 ppb NH3/air gases, the studied ITO-Au device demonstrates remarkable sensitivity ratios of 1786% and 98%, respectively, at 150?C. The related transient responses are also studied. The enhanced sensing performance of the studied ITO-Au device is primarily caused by the presented rougher surface which gives to the increased effective adsorption area. Experimentally, the studied ITO-Au device reveals advantages of simple structure, ease of fabrication, high sensing response, extremely low ammonia gas detecting limit, and low temperature operation capability.

Original languageEnglish
Pages (from-to)B17-B22
JournalJournal of the Electrochemical Society
Volume160
Issue number2
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment

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