Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode

Tai You Chen, Huey Ing Chen, Yi Jung Liu, Chien Chang Huang, Chi Shiang Hsu, Chung Fu Chang, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


The interesting ammonia sensing current-voltage (I-V) characteristics of a Pt/AlGaN/GaN Schottky diode are firstly studied and demonstrated. It is found that the ammonia sensitivity is increased by increasing the temperature. Yet, the sensitivity is decreased when the temperature is higher than 423 K. Experimentally, the studied device exhibits a good sensitivity of 13.1 under exposing to a relatively low concentration ammonia gas of 35 ppm NH 3/air. In addition, the good sensing performance of the studied device is demonstrated over a wide operating temperature regime from 298 K to 473 K. A highest ammonia sensing response of 182.7 is found at 423 K while a 10,000 ppm NH3/air gas is introduced. Crown

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalSensors and Actuators, B: Chemical
Issue number1
Publication statusPublished - 2011 Jul 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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