A tungsten trioxide (WO3) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO3 film (10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH3/air, 250 °C), an extremely low detection level (≤10-ppb NH3/air, 250 °C), a relatively low optimal operating temperature of 250 °C, and a widespread sensing concentration range. Furthermore, the device shows advantages including a simple structure, easy fabrication, and relatively lower operating temperature (≤250 °C). Thus, the proposed WO3 thin-film-based sensor device is promising for high-performance ammonia sensing applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering