TY - JOUR
T1 - Ammonia Sensing Characteristics of a Tungsten Trioxide Thin-Film-Based Sensor
AU - Chou, Tzu Chieh
AU - Chang, Ching Hong
AU - Lee, Cheng
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received July 14, 2018; revised September 21, 2018; accepted November 19, 2018. Date of publication December 3, 2018; date of current version December 24, 2018. This work was supported in part by the Ministry of Science and Technology of the China under Contract MOST-106-2221-E-006-224 and in part by the Advanced Optoelectronic Technology Center, National Cheng-Kung University. The review of this paper was arranged by Editor A. Bermak. (Corresponding author: Wen-Chau Liu.) The authors are with the Department of Electrical Engineering, Institute of Microelectronics, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 70101, Taiwan (e-mail: [email protected]).
Funding Information:
This work was supported in part by the Ministry of Science and Technology of the China under Contract MOST-106-2221-E-006-224 and in part by the Advanced Optoelectronic Technology Center, National Cheng-Kung University.
Publisher Copyright:
© 1963-2012 IEEE.
PY - 2019/1
Y1 - 2019/1
N2 - A tungsten trioxide (WO3) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO3 film (10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH3/air, 250 °C), an extremely low detection level (≤10-ppb NH3/air, 250 °C), a relatively low optimal operating temperature of 250 °C, and a widespread sensing concentration range. Furthermore, the device shows advantages including a simple structure, easy fabrication, and relatively lower operating temperature (≤250 °C). Thus, the proposed WO3 thin-film-based sensor device is promising for high-performance ammonia sensing applications.
AB - A tungsten trioxide (WO3) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO3 film (10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH3/air, 250 °C), an extremely low detection level (≤10-ppb NH3/air, 250 °C), a relatively low optimal operating temperature of 250 °C, and a widespread sensing concentration range. Furthermore, the device shows advantages including a simple structure, easy fabrication, and relatively lower operating temperature (≤250 °C). Thus, the proposed WO3 thin-film-based sensor device is promising for high-performance ammonia sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=85058127183&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058127183&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2882737
DO - 10.1109/TED.2018.2882737
M3 - Article
AN - SCOPUS:85058127183
SN - 0018-9383
VL - 66
SP - 696
EP - 701
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
M1 - 8556505
ER -