Ammonia Sensing Characteristics of a Tungsten Trioxide Thin-Film-Based Sensor

Tzu Chieh Chou, Ching Hong Chang, Cheng Lee, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


A tungsten trioxide (WO3) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO3 film (10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH3/air, 250 °C), an extremely low detection level (≤10-ppb NH3/air, 250 °C), a relatively low optimal operating temperature of 250 °C, and a widespread sensing concentration range. Furthermore, the device shows advantages including a simple structure, easy fabrication, and relatively lower operating temperature (≤250 °C). Thus, the proposed WO3 thin-film-based sensor device is promising for high-performance ammonia sensing applications.

Original languageEnglish
Article number8556505
Pages (from-to)696-701
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number1
Publication statusPublished - 2019 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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