Ammonia Sensing Characteristics of a Tungsten Trioxide Thin-Film-Based Sensor

Tzu Chieh Chou, Ching Hong Chang, Cheng Lee, Wen-Chau Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A tungsten trioxide (WO 3 ) thin-film-based ammonia sensor device prepared using radio frequency sputtering is reported and studied. A very thin WO 3 film (10 nm) is employed in the studied device. Experimentally, the studied device exhibits a high ammonia sensing response of 13.7 (at 1000-ppm NH 3 /air, 250 °C), an extremely low detection level (≤10-ppb NH 3 /air, 250 °C), a relatively low optimal operating temperature of 250 °C, and a widespread sensing concentration range. Furthermore, the device shows advantages including a simple structure, easy fabrication, and relatively lower operating temperature (≤250 °C). Thus, the proposed WO 3 thin-film-based sensor device is promising for high-performance ammonia sensing applications.

Original languageEnglish
Article number8556505
Pages (from-to)696-701
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number1
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Ammonia
Tungsten
Thin films
Sensors
Air
Sputtering
Fabrication
Temperature
tungsten oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chou, Tzu Chieh ; Chang, Ching Hong ; Lee, Cheng ; Liu, Wen-Chau. / Ammonia Sensing Characteristics of a Tungsten Trioxide Thin-Film-Based Sensor. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 1. pp. 696-701.
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Ammonia Sensing Characteristics of a Tungsten Trioxide Thin-Film-Based Sensor. / Chou, Tzu Chieh; Chang, Ching Hong; Lee, Cheng; Liu, Wen-Chau.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 1, 8556505, 01.01.2019, p. 696-701.

Research output: Contribution to journalArticle

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