Ammonia sensing characteristics of sputtered indium tin oxide (ITO) thin films on quartz and sapphire substrates

Cheng Wei Lin, Huey Ing Chen, Tai You Chen, Chien Chang Huang, Chi Shiang Hsu, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Indium tin oxide (ITO) thin-film-based ammonia sensors on sapphire and quartz substrates, fabricated by radio-frequency sputtering with substrate heated treatments, are studied and demonstrated. Experimentally, good NH 3 sensing properties of ITO thin films deposited on a quartz substrate, with a substrate temperature Ts of 100 °C, including a high sensitivity ratio of 2312%, and fast response and recovery times of 73 and 104 s upon the introduction of a 1000-ppm NH3/air gas at 150 °C, are observed. This performance is superior to other previously reported ITO thin-film-based ammonia sensors. Moreover, a good logarithmic linear relationship between the sensitivity ratio and the NH3 concentration is found. Therefore, based on the advantages of simple structure, easy operation, low cost, and excellent properties, the studied device gives a promise for high-performance ammonia sensing applications.

Original languageEnglish
Article number6031908
Pages (from-to)4407-4413
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number12
DOIs
Publication statusPublished - 2011 Dec

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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