Ammonia sensing properties of a Pt/AlGaN/GaN schottky diode

Tai You Chen, Huey Ing Chen, Yi Jung Liu, Chien Chang Huang, Chi Shiang Hsu, Chung Fu Chang, Wen Chau Liu

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19 Citations (Scopus)

Abstract

An interesting Pt/AlGaN/GaN Schottky-type ammonia gas sensor is fabricated and studied. Both the steady-and transient-state behaviors of ammonia adsorption reactions are investigated. At 150 °C, significant ammonia detection is observed under a low ammonia concentration of 35-ppm NH3/air. Moreover, a high ammonia sensing response of 18300% and the large Schottky barrier variation ratio Δbb/air of 13.8% are observed upon exposure to a 1% NH3/air gas at 150 °C. The presence of dipoles at the metalsemiconductor interface leads to a lowering effect of Schottky barrier height and a larger current. In addition, based on thermodynamics, in contrast with a hydrogen adsorption reaction, the ammonia adsorption reaction is an endothermic reaction. Consequently, the studied NH3 sensor structure provides the promise to integrate high-performance AlGaN/GaN-based optoelectronic and microwave devices on a single chip.

Original languageEnglish
Article number5746515
Pages (from-to)1541-1547
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number5
DOIs
Publication statusPublished - 2011 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chen, T. Y., Chen, H. I., Liu, Y. J., Huang, C. C., Hsu, C. S., Chang, C. F., & Liu, W. C. (2011). Ammonia sensing properties of a Pt/AlGaN/GaN schottky diode. IEEE Transactions on Electron Devices, 58(5), 1541-1547. [5746515]. https://doi.org/10.1109/TED.2011.2115245