Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO) thin film transistors (TFTs). Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α;-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (FE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of 10⁶, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.