Amorphous IGZO nonvolatile memory thin film transistors using Ta 2O 5 gate dielectric

C. J. Chiu, S. P. Chang, W. Y. Weng, S. J. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta 2O 5 gate insulator is proposed. The high-dielectric-constant material Ta 2Oi was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (δVth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta 2Oi can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.

Original languageEnglish
Title of host publicationNanotechnology and Advanced Materials
Pages233-238
Number of pages6
DOIs
Publication statusPublished - 2012
Event2012 International Conference on Nanotechnology Technology and Advanced Materials, ICNTAM 2012 - Hong Kong, Hong Kong
Duration: 2012 Apr 122012 Apr 13

Publication series

NameAdvanced Materials Research
Volume486
ISSN (Print)1022-6680

Other

Other2012 International Conference on Nanotechnology Technology and Advanced Materials, ICNTAM 2012
CountryHong Kong
CityHong Kong
Period12-04-1212-04-13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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