We report the fabrication of amorphous (InxGa1-x)2O3 metal-semiconductor-metal ultraviolet (UV) photodetectors on glass substrate by co-sputtering. It was found that, we could change the cutoff wavelength of the fabricated photodetectors by changing the RF sputtering power of the In2O3 target. With 5 V applied bias, it was found that the measured dark currents were 2× 10-12 , 1× 10-11 , and 2.3×10-11 A for sample A prepared with 40 W In2O3 sputtering power, sample B prepared with 50 W In2O3 sputtering power, and sample C prepared with 60 W In2O3 sputtering power, respectively. It was also found that the UV-to-visible rejection ratios were 3× 103 , 5× 103 , and 1.5× 104 for samples A, B, and C, respectively. Furthermore, it was found that the response speeds of the fabricated devices were good.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering