Amorphous indium-zinc oxide semiconductor thin-film transistors

Jun Yi Li, Sheng Po Chang, Wen Chen Hua, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review


We report on the performance and electrical properties of sputtering-processed amorphous indium- zinc oxide (α-IZO) thin-film transistors (TFTs). We were able to modulate the Ar and O components by changing the partial pressure. Additionally, the chemical composition of α-IZO had a significant effect on the field-effect mobility (μFE), carrier concentration, and subthreshold swing (SS) of the device. Sputtering-processed α-IZO TFTs were fabricated with an on/off current ratio of ∼107, a high mobility of 38.7 cm2/Vs, and a subthreshold slope as steep as 0.16 V/dec. Our results indicate that high-performance α-IZO TFTs can be successfully and easily fabricated using the sputtering process.

Original languageEnglish
Pages (from-to)388-391
Number of pages4
JournalJournal of Nanoelectronics and Optoelectronics
Issue number3
Publication statusPublished - 2014 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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